The reactivity and thermal stability of zirconium and hafnium complexes containing the N-alkyl-substituted amine biphenolate ligands of the type [RN(CH2-2-O-3,5-C6H2(tBu)2)2](2-) ([R-ONO](2-); R = tBu (1a), iPr (1b), or nPr (1c)) were investigated. The reactions of either [1a]M(OiPr)2 (M = Zr or Hf) with equimolar H2[1a] or M(OiPr)4(HOiPr) (M = Zr or Hf) with 2 equiv of H2[1a] at 25 °C in diethyl ether or 80 °C in toluene afford moderate yields of colorless crystals of M[1a](OiPr)(iPrOCH2-2-O-3,5-C6H2(tBu)2) (M = Zr (4a) or Hf (5a)). Controlled experiments revealed that the production of 4a and 5a proceeds via unexpected thermal degradation of H2[1a] that produces a highly reactive, transient ortho-quinone methide intermediate. Similar reactions employing H2[1b] and H2[1c], however, led to the formation of homoleptic bis-ligand complexes Zr[1b]2 (8b) and M[1c]2 (M = Zr (8c) or Hf (9c)) as colorless crystals. Decisive factors governing these divergent reaction pathways and complex constitutions are discussed. The X-ray structures of 4a, 5a, 8b, 8c, and 9c are presented.
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ACS Appl Mater Interfaces
January 2025
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure.
View Article and Find Full Text PDFNano Converg
December 2024
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-Ro, Yuseong-Gu, Daejeon, 34141, South Korea.
The advancement in high-performance computing technologies, including quantum and aerospace systems, necessitates components that operate efficiently at cryogenic temperatures. In this study, we demonstrate a hafnia-based ferroelectric tunnel junction (FTJ) that achieves a record-high tunneling electroresistance (TER) ratio of over 200,000 and decade-long retention characteristics. By introducing asymmetric oxygen vacancies through the strategic use of indium oxide (InO) layer, we enhance the TER ratio without increasing off-current, addressing the longstanding issue of low on-current in hafnia-based FTJs.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.
The discovery of ferroelectricity in hafnia based thin films has catalyzed significant research focused on understanding the ferroelectric property origins and means to increase stability of the ferroelectric phase. Prior studies have revealed that biaxial tensile stress via an electrode "capping effect" is a suspected ferroelectric phase stabilization mechanism. This effect is commonly reported to stem from a coefficient of thermal expansion (CTE) incongruency between the hafnia and top electrode.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
November 2024
Institut für Anorganische Chemie, Eberhard Karls Universität Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany.
Tetrachlorides of zirconium and hafnium form adducts (2, 3) with an intramolecular germylene phosphine Lewis pair. Two electron reduction treating the adducts with [NacnacMg] gives the low-valent metal complexes (4, 5) featuring η-Trip coordination at the Zr(II) and Hf(II) metal atom. Reduction of the M(II)-complexes gives the zerovalent metal complexes of zirconium (6) and hafnium (7), which have been structurally characterized.
View Article and Find Full Text PDFDalton Trans
November 2024
Section of Inorganic and Analytical Chemistry, Department of Chemistry, University of Ioannina, Ioannina 45110, Greece.
Group (IV) metal oxo clusters represent a unique family of molecular species that are increasingly being utilized in applications ranging from catalysis and materials chemistry to electronics, and sensors. These clusters exhibit distinctive structural features, chemical reactivity, and electronic structure. Nevertheless, their full potential has yet to be fully realized due to the lack of deeper understanding regarding their structure and formation mechanisms, inherent traits, and intricacies in their design, which could ultimately enable significant customization of their properties and overall behaviour.
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