Small aluminum nanoparticles have the potential to exhibit localized surface plasmon resonances in the deep ultraviolet region of the electromagnetic spectrum, however technical and scientific challenges make it difficult to attain this limit. We report the fabrication of arrays of Al/Al2O3 core/shell nanoparticles with a metallic-core diameter between 12 and 25 nm that display sharp plasmonic resonances at very high energies, up to 5.8 eV (down to λ = 215 nm). The arrays were fabricated by means of a straightforward self-organization approach. The experimental spectra were compared with theoretical calculations that allow the correlation of each feature to the corresponding plasmon modes.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/nn400918n | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
12″ Wafer-Scale Mass-Manufactured Metal-Insulator-Metal Reflective Metaholograms by Nanotransfer Printing.
ACS Appl Mater Interfaces
January 2025
Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea.
The unique characteristics of metasurfaces to precisely control the amplitude, phase, and polarization of light within a thin, flat footprint make them a promising replacement for bulky optical components. However, fabrication methods of conventional metasurfaces have suffered from low throughput and high costs, limiting scalability and practical application. To address these challenges, an advanced fabrication technique is developed by combining deep-ultraviolet argon fluoride photolithography with wafer-scale nanotransfer printing to facilitate the scalable fabrication of metal-insulator-metal structures.
View Article and Find Full Text PDFPlasmon-enhanced visible photodetectors based on hexagonal boron nitride (hBN) with gold (Au), silver (Ag), and non-alloyed bimetallic (Au/Ag) nanoparticles.
Sci Rep
January 2025
Photonics Research Centre, Universiti Malaya, Kuala Lumpur, 50603, Malaysia.
Two-dimensional (2D) hexagonal boron nitride (hBN) has garnered significant attention due to its exceptional thermal and chemical stability, excellent dielectric properties, and unique optical characteristics, making it widely used in deep ultraviolet (DUV) applications. However, the integration of hBN with plasmonic materials in the visible region (532 nm) has not been fully explored, particularly in terms of morphology regulation and size control of mono- and bimetallic nanoparticles (BMNPs) namely gold (Au), silver (Ag) and Au-Ag. A Schottky junction-based metal-semiconductor contact configuration is employed to achieve hot-carrier reflections on the metal side, enhancing the quantum efficiency of the photodetector.
View Article and Find Full Text PDFUV Hyperspectral Imaging with Xenon and Deuterium Light Sources: Integrating PCA and Neural Networks for Analysis of Different Raw Cotton Types.
J Imaging
December 2024
Process Analysis and Technology PA & T, Reutlingen University, Alteburgstraße 150, 72762 Reutlingen, Germany.
Ultraviolet (UV) hyperspectral imaging shows significant promise for the classification and quality assessment of raw cotton, a key material in the textile industry. This study evaluates the efficacy of UV hyperspectral imaging (225-408 nm) using two different light sources: xenon arc (XBO) and deuterium lamps, in comparison to NIR hyperspectral imaging. The aim is to determine which light source provides better differentiation between cotton types in UV hyperspectral imaging, as each interacts differently with the materials, potentially affecting imaging quality and classification accuracy.
View Article and Find Full Text PDFHere, we systematically investigate the effect of mesa/sub-mesa sidewall engineering on single-junction (SJ) and high-voltage (HV) deep ultraviolet light-emitting diodes (DUV LEDs). The configuration of ∼46° inclined angle of the mesa/sub-mesa sidewall and Al reflector optimally promotes light extraction of SJ/HV DUV LEDs. We further observe substantial improvements in the self-heating and external quantum efficiency (EQE) droop effects of HV DUV LEDs with an increasing number of sub-mesas.
View Article and Find Full Text PDFInverse design (ID) is a computational method that systematically explores a design space to find optimal device geometries based on specific performance criteria. In silicon photonics, ID often generates design features that degrade significantly due to the fabrication process, limiting the applicability of these devices in scalable fabrication. We demonstrate a solution to this performance degradation through fabrication-aware inverse design (FAID), integrating lithography models for deep-ultraviolet (DUV) lithography and electron-beam lithography (EBL) into the shape optimization approach of ID.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!