Note: a simple thermal gradient annealing unit for the treatment of thin films.

Rev Sci Instrum

SmartState Center for Strategic Approaches to the Generation of Electricity, Department of Chemical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA.

Published: March 2013

A gradient annealing cell has been developed for the high-throughput study of thermal annealing effects on thin-film libraries in different environments. The inexpensive gradient annealing unit permits temperature gradients as large as 28 °C∕mm and can accommodate samples ranging in length from 13 mm to 51 mm. The system was validated by investigating the effects of annealing temperature on the crystallinity, resistivity, and transparency of tin-doped indium oxide deposited on a glass substrate by magnetron sputtering. The unit developed in this work will permit the rapid optimization of materials properties such as crystallinity, homogeneity, and conductivity across a variety of applications.

Download full-text PDF

Source
http://dx.doi.org/10.1063/1.4795831DOI Listing

Publication Analysis

Top Keywords

gradient annealing
12
annealing unit
8
annealing
5
note simple
4
simple thermal
4
thermal gradient
4
unit treatment
4
treatment thin
4
thin films
4
films gradient
4

Similar Publications

A novel ternary boride, NiPtB ( = 0.5), was obtained by argon-arc melting of the elements followed by annealing at 750 °C. It exhibits a new structure type with the space group ( = 2.

View Article and Find Full Text PDF

[Construction of a visual intelligent identification model for in Yunnan Province based on the EfficientNet-B4 model].

Zhongguo Xue Xi Chong Bing Fang Zhi Za Zhi

January 2025

School of Public Health, Nanjing Medical University, Nanjing, Jiangsu 211166, China.

Objective: To construct a visual intelligent recognition model for in Yunnan Province based on the EfficientNet-B4 model, and to evaluate the impact of data augmentation methods and model hyperparameters on the recognition of .

Methods: A total of 400 and 400 snails were collected from Yongsheng County, Yunnan Province in June 2024, and snail images were captured following identification and classification of 300 and 300 snails. A total of 925 images and 1 062 snail images were collected as a dataset and divided into a training set and a validation set at a ratio of 8:2, while 352 images captured from the remaining 100 and 354 images from the remaining 100 snails served as an external test set.

View Article and Find Full Text PDF

High-energy metal deposition significantly impacts the performance and reliability of two-dimensional (2D) semiconductors and nanodevices. This study investigates the localized annealing effect in atomically thin InO induced during high-energy metal deposition. The localized heating effect alters the electronic performance of InO devices, especially in shorter channel devices, where heat dissipation is further constrained.

View Article and Find Full Text PDF

Gradient Surface Gallium-Doped Hematite Photoelectrode for Enhanced Photoelectrochemical Water Oxidation.

Nano Lett

January 2025

Institute of Photoelectronic Thin Film Devices and Technology, State Key Laboratory of Photovoltaic Materials and Cells, Tianjin Key Laboratory of Efficient Solar Energy Utilization, Ministry of Education Engineering Research Center of Thin Film Photoelectronic Technology, Nankai University, 300350 Tianjin, China.

Hematite is a promising material for photoelectrochemical (PEC) water oxidation, but its photocurrent is limited by bulk charge recombination and poor oxidation kinetics. In this study, we report a high-performance FeO photoanode achieved through gradient surface gallium doping, utilizing a GaO overlayer on FeOOH precursors via atomic layer deposition (ALD) and co-annealing for Ga diffusion. The Ga-doped layer passivates surface states and modifies the band structure, creating a built-in electric field that enhances the charge separation efficiency.

View Article and Find Full Text PDF

A Scanning Photoelectron Microscopy (SPEM) experiment has been applied to ZnO:N films deposited by Atomic Layer Deposition (ALD) under O-rich conditions and post-growth annealed in oxygen at 800 °C. spatial resolution (130 nm) allows for probing the electronic structure of single column of growth. The samples were cleaved under ultra-high vacuum (UHV) conditions to open atomically clean cross-sectional areas for SPEM experiment.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!