AI Article Synopsis
- Silicon dangling bonds on the Si(001):H surface are highly reactive, allowing for precise atom and molecule placement through hydrogen atom removal.
- Current techniques for this involve using a scanning probe microscope to sequentially remove hydrogen atoms.
- A new thermal process has been developed to create long, orderly rows of silicon dangling bonds, enabling the self-assembly of atoms and molecules into extremely long one-dimensional structures.
Article Abstract
Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001):H) surface are highly reactive, thus enabling site-selective absorption of atoms and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001):H surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001):H. The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration.
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| http://dx.doi.org/10.1021/nn4010236 | DOI Listing |
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