Developing tailored micro/nanostructure interfaces is an effective way to make novel optoelectronic devices or enhance their performances. Here we report the fabrication of a PEDOT:PSS/ZnO micro/nanowire-based self-powered UV photosensor. The generation of photocurrent at zero bias is attributed to the separation of photogenerated electron-hole pairs within the built-in electric field at the PEDOT:PSS/ZnO interface upon UV light illumination. Furthermore, the piezotronic effect on the UV photoresponsivity under different strains is investigated, which is due to the modification of energy band diagram at the p-n heterojunction by strain-induced piezoelectric polarization. This study demonstrates a prospective approach to engineering the performance of a photodetector through straining and may offer theoretical supporting in future optoelectronic device fabrication and modification.
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http://dx.doi.org/10.1021/am4008775 | DOI Listing |
Nat Commun
January 2025
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
In-sensor computing has emerged as an ultrafast and low-power technique for next-generation machine vision. However, in situ training of in-sensor computing systems remains challenging due to the demands for both high-performance devices and efficient programming schemes. Here, we experimentally demonstrate the in situ training of an in-sensor artificial neural network (ANN) based on ferroelectric photosensors (FE-PSs).
View Article and Find Full Text PDFAdv Mater
December 2024
Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, Kowloon, 999077, P. R. China.
Machine vision systems that consist of cameras and image-processing components for visual inspection and identification tasks play a critical role in various intelligent applications, including pilotless vehicles and surveillance systems. However, current systems usually possess a limited dynamic range and fixed photoresponsivity, restricting their capability of gaining high-fidelity images when encoding a high-contrast scene. Here, it is shown that a photovoltaic memristor incorporating two antagonistic photovoltaic junctions can autonomously adjust its response to varying light stimuli, enabling the amplification of shadows and inhibition of highlight saturation.
View Article and Find Full Text PDFSmall
August 2023
CMEMS - UMinho, University of Minho, Campus de Azurem, Guimarães, 4804-533, Portugal.
Self-powered photodetectors (PDs) have been recognized as one of the developing trends of next-generation optoelectronic devices. Herein, it is shown that by introducing a thin layer of SnO film between the Si substrate and the ZnO film, the self-powered photodetector Al/Si/SnO/ZnO/ITO exhibits a stable and uniform violet sensing ability with high photoresponsivity and fast response. The SnO layer introduces a built-in electrostatic field to highly enhance the photocurrent by over 1000%.
View Article and Find Full Text PDFNat Commun
March 2022
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Nowadays the development of machine vision is oriented toward real-time applications such as autonomous driving. This demands a hardware solution with low latency, high energy efficiency, and good reliability. Here, we demonstrate a robust and self-powered in-sensor computing paradigm with a ferroelectric photosensor network (FE-PS-NET).
View Article and Find Full Text PDFAdv Mater
February 2022
Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea.
With highly diverse multifunctional properties, hafnium oxide (HfO ) has attracted considerable attention not only because of its potential to address fundamental questions about material behaviors, but also its potential for applied perspectives like ferroelectric memory, transistors, and pyroelectric sensors. However, effective harvesting of the pyro-photoelectric effect of HfO to develop high-performing self-biased photosensors and electric writable and optical readable memory has yet to be developed. Here, a proof-of-concept HfO -based self-powered and ultrafast (response time ≈ 60 µs) infrared pyroelectric sensor with a responsivity of up to 68 µA W is developed.
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