The study details the development of a fully validated, rapid and portable sensor based method for the on-site analysis of microcystins in freshwater samples. The process employs a novel lysis method for the mechanical lysis of cyanobacterial cells, with glass beads and a handheld frother in only 10 min. The assay utilises an innovative planar waveguide device that, via an evanescent wave excites fluorescent probes, for amplification of signal in a competitive immunoassay, using an anti-microcystin monoclonal with cross-reactivity against the most common, and toxic variants. Validation of the assay showed the limit of detection (LOD) to be 0.78 ng mL(-1) and the CCβ to be 1 ng mL(-1). Robustness of the assay was demonstrated by intra- and inter-assay testing. Intra-assay analysis had % C.V.s between 8 and 26% and recoveries between 73 and 101%, with inter-assay analysis demonstrating % C.V.s between 5 and 14% and recoveries between 78 and 91%. Comparison with LC-MS/MS showed a high correlation (R(2)=0.9954) between the calculated concentrations of 5 different Microcystis aeruginosa cultures for total microcystin content. Total microcystin content was ascertained by the individual measurement of free and cell-bound microcystins. Free microcystins can be measured to 1 ng mL(-1), and with a 10-fold concentration step in the intracellular microcystin protocol (which brings the sample within the range of the calibration curve), intracellular pools may be determined to 0.1 ng mL(-1). This allows the determination of microcystins at and below the World Health Organisation (WHO) guideline value of 1 μg L(-1). This sensor represents a major advancement in portable analysis capabilities and has the potential for numerous other applications.
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http://dx.doi.org/10.1016/j.aca.2013.01.033 | DOI Listing |
Appl Phys Lett
January 2024
Communications Technology Laboratory, National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305, USA.
Fused silica has become an interesting alternative to silicon for millimeter-wave (mmWave) applications. Unfortunately, there are a few reports on the measurement of fused silica's permittivity above 110 GHz that use electrical rather than optical methods. Given that mmWave applications use electrical circuits, additional electrical data would be useful to industry.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Université de Bordeaux, CNRS, Bordeaux INP, ICMCB, UMR 5026, Pessac F-33600, France.
Femtosecond laser inscription in a ytterbium-doped silver-containing phosphate glass is demonstrated by achieving 3D highly localized laser-induced silver photochemistry. The produced fluorescent silver nanoclusters lead to high optical contrast in the visible range, showing that the coinsertion of Yb ions is not detrimental to the silver-based photochemistry. We demonstrate efficient energy transfer from these silver nanoclusters to the rare-earth Yb ions, leading to near-IR background-free fluorescence emission.
View Article and Find Full Text PDFA fiber Bragg grating (FBG) demodulation system based on arrayed waveguide gratings (AWGs) is proposed. We designed the key parameters of the AWG, prepared the AWG chip based on a silica-on-silicon planar light wave circuit (PLC) platform, and integrated the AWG with a PD array. Eight AWG output channels were selected and the output signals from the photodiode (PD) array was connected to the board with gold wire bonding.
View Article and Find Full Text PDFGeSn alloy has emerged as an attractive active material for Si-based mid-infrared (MIR) lasers due to its direct bandgap nature at higher Sn concentrations. Here, we report on an optically-pumped GeSn MIR lasers based on planar slab waveguide with a top Si ridge structure. The inclusion of 10% Sn transforms the GeSn active layer into a direct bandgap material.
View Article and Find Full Text PDFWe propose a strategy to monolithically integrate active III-V lasers and passive dielectric devices, where the passive waveguides are fabricated after the MBE growth of the III-V semiconductors on a planar Si substrate. This avoids any airgap at the active/passive interface, replaced by a thin dielectric interface layer which improves the light coupling efficiency. We demonstrate GaSb DLs butt-coupled to SiN waveguides with ∼23% transmission after 2 mm SiN, corresponding to ∼35% transmission at the active/passive interface.
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