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While microelectronic devices are frequently characterized with surface-sensitive techniques having nanometer resolution, interconnections used in 3D integration require 3D imaging with high penetration depth and deep sub-micrometer spatial resolution. X-ray tomography is well adapted to this situation. In this context, the purpose of this study is to assess a versatile and turn-key tomographic system allowing for 3D x-ray nanotomography of copper pillars. The tomography tool uses the thin electron beam of a scanning electron microscope (SEM) to provoke x-ray emission from specific metallic targets. Then, radiographs are recorded while the sample rotates in a conventional cone beam tomography scheme that ends up with 3D reconstructions of the pillar. Starting from copper pillars data, collected at the European Synchrotron Radiation Facility, we build a 3D numerical model of a copper pillar, paying particular attention to intermetallics. This model is then used to simulate physical radiographs of the pillar using the geometry of the SEM-hosted x-ray tomography system. Eventually, data are reconstructed and it is shown that the system makes it possible the quantification of 3D intermetallics volume in copper pillars. The paper also includes a prospective discussion about resolution issues.

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http://dx.doi.org/10.1063/1.4792377DOI Listing

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Article Synopsis
  • As chip sizes shrink and semiconductor integration grows, TSV technology faces challenges in thermal reliability due to differences in thermal expansion in interposer substrates.
  • The study performs a thermo-mechanical analysis of TSVs in multi-layered interposers, identifying critical locations and assessing thermal stress throughout varying temperatures (-55 °C to 85 °C) while considering defects in copper pillars.
  • Results highlight that the most stressed TSV is centrally located, demonstrating unique stress and deformation patterns, with a lifespan estimation of around 317,080 cycles, and indicate that certain electroplating defects can alleviate thermal stress during temperature changes.
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