We report a morphotropic phase transformation in vanadium dioxide (VO2) nanobeams annealed in a high-pressure hydrogen gas, which leads to the stabilization of metallic phases. Structural analyses show that the annealed VO2 nanobeams are hexagonal-close-packed structures with roughened surfaces at room temperature, unlike as-grown VO2 nanobeams with the monoclinic structure and with clean surfaces. Quantitative chemical examination reveals that the hydrogen significantly reduces oxygen in the nanobeams with characteristic nonlinear reduction kinetics which depend on the annealing time. Surprisingly, the work function and the electrical resistance of the reduced nanobeams follow a similar trend to the compositional variation due mainly to the oxygen-deficiency-related defects formed at the roughened surfaces. The electronic transport characteristics indicate that the reduced nanobeams are metallic over a large range of temperatures (room temperature to 383 K). Our results demonstrate the interplay between oxygen deficiency and structural/electronic phase transitions, with implications for engineering electronic properties in vanadium oxide systems.
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http://dx.doi.org/10.1021/nl400511x | DOI Listing |
ACS Photonics
August 2024
Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.
The stable coexistence of insulating and metallic phases in strained vanadium dioxide (VO) has garnered significant research interest due to the intriguing phase transition phenomena. However, the temporal behavior of charge carriers in different phases of VO remains elusive. Herein, we employ near-field optical nanoscopy to capture nanoscale alternating phase domains in bent VO nanobeams.
View Article and Find Full Text PDFPhys Chem Chem Phys
April 2024
Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China.
The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO nanobeams (NBs) synthesized on SiO/Si substrates employing VO as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT () drops by up to 95 K relative to the pristine VO NBs.
View Article and Find Full Text PDFChemphyschem
June 2023
State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
Oxygen defects are among essential issues and required to be manipulated in correlated electronic oxides with insulator-metal transition (IMT). Besides, surface and interface control are necessary but challenging in field-induced electronic switching towards advanced IMT-triggered transistors and optical modulators. Herein, we demonstrated reversible entropy-driven oxygen defect migrations and reversible IMT suppression in vanadium dioxide (VO ) phase-change electronic switching.
View Article and Find Full Text PDFACS Appl Mater Interfaces
March 2023
Chemical Materials Solutions Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
We demonstrate the modulation of electrical switching properties through the interconnection of multiple nanoscale channels (∼600 nm) in a single VO nanobeam with a coexisting metal-insulator (M-I) domain configuration during phase transition. The Raman scattering characteristics of the synthesized VO nanobeams provide evidence that substrate-induced interfacial strain can be inhomogeneously distributed along the length of the nanobeam. Interestingly, the nanoscale VO devices with the same channel length and width exhibit distinct differences in hysteric current-voltage characteristics, which are explained by theoretical calculations of resistance change combined with Joule heating simulations of the nanoscale VO channels.
View Article and Find Full Text PDFNanoscale
June 2017
Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal-insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range.
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