We demonstrate a novel integrated silicon and ultra-low-loss Si3N4 waveguide platform. Coupling between layers is achieved with (0.4 ± 0.2) dB of loss per transition and a 20 nm 3-dB bandwidth for one tapered coupler design and with (0.8 ± 0.2) dB of loss per transition and a 100 nm 3-dB bandwidth for another. The minimum propagation loss measured in the ultra-low-loss waveguides is 1.2 dB/m in the 1590 nm wavelength regime.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1364/OE.21.000544 | DOI Listing |
Nat Commun
January 2025
State Key Laboratory for Extreme Photonics and Instrumentation, Center for Optical & Electromagnetic Research, College of Optical Science and Engineering, International Research Center for Advanced Photonics (Haining), Zhejiang University, Hangzhou, China.
Silicon photonic signal processors promise a new generation of signal processing hardware with significant advancements in processing bandwidth, low power consumption, and minimal latency. Programmable silicon photonic signal processors, facilitated by tuning elements, can reduce hardware development cycles and costs. However, traditional programmable photonic signal processors based on optical switches face scalability and performance challenges due to control complexity and transmission losses.
View Article and Find Full Text PDFNanophotonics
May 2024
Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, International Research Center for Advanced Photonics (Hanining), Zhejiang University, Hangzhou 310058, China.
Optical signal processing has been playing a crucial part as powerful engine for various information systems in the practical applications. In particular, achieving large-scale programmable chips for signal processing are highly desirable for high flexibility, low cost and powerful processing. Silicon photonics, which has been developed successfully in the past decade, provides a promising option due to its unique advantages.
View Article and Find Full Text PDFLight Sci Appl
September 2024
Photonics Devices and Systems Group, Singapore University of Technology and Design, Singapore, Singapore.
Light Sci Appl
July 2024
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.
Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing.
View Article and Find Full Text PDFVisible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film's deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform's fundamental limit.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!