Minimization of the contact resistance between InAs nanowires and metallic contacts.

We investigate different processes for optimizing the formation of Ohmic contacts to InAs nanowires. The nanowires are grown via molecular beam epitaxy without the use of metal catalysts. Metallic contacts are attached to the nanowires by using an electron beam lithography process. Before deposition of the contacts, the InAs nanowires are treated either by wet etching in an ammonium polysulfide (NH(4))(2)S(x) solution or by an argon milling process in order to remove a surface oxide layer. Two-point electrical measurements show that the resistance of the ammonium polysulfide-treated nanowires is two orders of magnitude lower than that of the untreated nanowires. The nanowires that are treated by the argon milling process show a resistance which is more than an order of magnitude lower than that of those treated with ammonium polysulfide. Four-point measurements allow us to extract an upper bound of 1.4 × 10(-7) Ω cm(2) for the contact resistivity of metallic contacts on nanowires treated by the argon milling process.