High performance Vernier racetrack resonators.

Opt Lett

Department of Electrical and Computer Engineering, University of British Columbia, 2332 Main Mall, Vancouver, British Columbia V6T 1Z4, Canada.

Published: December 2012

AI Article Synopsis

  • The research showcases exceptional performance in silicon racetrack resonators that utilize the Vernier effect, achieving an interstitial peak suppression (IPS) of 25.5 dB, a significant improvement over past records.
  • The study explores how variations in the inter-ring gap distance affect both the IPS and the 3 dB bandwidth (BW), providing both theoretical and experimental evidence.
  • It reveals that increasing the gap distance results in higher IPS but a lower 3 dB BW, highlighting a trade-off between these two parameters.

Article Abstract

We demonstrate record performance of series-coupled silicon racetrack resonators exhibiting the Vernier effect. Our device has an interstitial peak suppression (IPS) of 25.5 dB, which is 14.5 dB larger than previously reported results. We also demonstrate the relationship between the inter-ring gap distance and the IPS as well as the 3 dB bandwidth (BW) both theoretically and experimentally. Namely, we show that as the inter-ring gap distance increases, the IPS increases and the 3 dB BW decreases.

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Source
http://dx.doi.org/10.1364/OL.37.005199DOI Listing

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