We report here that a commercial silicon-on-insulator (SOI) wafer offers an opportunity for laser desorption/ionization (LDI) of peptide molecules, which occurs directly from its flat surface without requiring special surface preparation. The LDI-on-SOI exhibits intact ionization of peptides with a good detection limit of lower than 20 fmol, of which the mass range is demonstrated up to insulin with citric acid additives. The LDI process most likely arises from laser-induced surface heating promoted by two-dimensional thermal confinement in the thin Si surface layer of the SOI wafer. As a consequence of the thermal process, the LDI-on-SOI method is also capable of creating post-source decay (PSD) of the resulting peptide LDI ions, which is suitable for peptide sequencing using conventional TOF/TOF mass spectrometry.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1007/s13361-012-0534-4 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
A High-Performance Micro Differential Pressure Sensor.
Micromachines (Basel)
November 2024
School of Microelectronics, Shanghai University, Shanghai 201800, China.
With the development of the micro electromechanical system (MEMS), which widely adopts micro differential pressure sensors (MDPSs), the demand for high-performance MDPSs had continuously increased. Pressure sensors realized using MEMS technology integrated with biomedical catheters are of significant importance in the detection and treatment of various biological diseases. Biomedical catheters used in low-Fr applications (1Fr = 0.
View Article and Find Full Text PDFWe propose a method to improve the performance of N × N(N⩾3) multimode interference couplers (MMIs) by suppressing propagation constant errors through controlling excited guided modes and the width of MMI, without increasing their fabrication complexity. 5 × 5 MMIs were fabricated on a commercial 220-nm silicon-on-insulator (SOI) platform to verify the method. Measurement results show that insertion losses (ILs) and imbalances (Ims) are reduced from 2.
View Article and Find Full Text PDF68-channel neural signal processing system-on-chip with integrated feature extraction, compression, and hardware accelerators for neuroprosthetics in 22 nm FDSOI.
Front Neurosci
October 2024
Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Dresden University of Technology, Dresden, Germany.
Introduction: Multi-channel electrophysiology systems for recording of neuronal activity face significant data throughput limitations, hampering real-time, data-informed experiments. These limitations impact both experimental neurobiology research and next-generation neuroprosthetics.
Methods: We present a novel solution that leverages the high integration density of 22nm fully-depleted silicon-on-insulator technology to address these challenges.
Electrical manipulation of telecom color centers in silicon.
Nat Commun
June 2024
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.
View Article and Find Full Text PDFLithium tantalate photonic integrated circuits for volume manufacturing.
Nature
May 2024
Institute of Physics, Swiss Federal Institute of Technology Lausanne, EPFL, Lausanne, Switzerland.
Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO) have demonstrated the vast capabilities of materials with a high Pockels coefficient. They enable linear and high-speed modulators operating at complementary metal-oxide-semiconductor voltage levels to be used in applications including data-centre communications, high-performance computing and photonic accelerators for AI. However, industrial use of this technology is hindered by the high cost per wafer and the limited wafer size.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!