AI Article Synopsis
- Recent studies show that breaking sublattice symmetry in graphene creates an energy gap at the Dirac point, leading to the development of Gr:Si sheets, which are graphene decorated with ultrathin silicon islands.
- Analyses using various microscopy and spectroscopy techniques revealed that these Si islands, measuring about 2 to 4 nm thick, bond with graphene through van der Waals forces.
- Field-effect transistors made from Gr:Si sheets demonstrate improved electronic performance, including increased transconductance and current levels, and show a significant increase in resistance at lower temperatures, indicating the presence of a bandgap due to the Si islands.
Article Abstract
Recent theoretical and experimental studies demonstrated that breaking of the sublattice symmetry in graphene produces an energy gap at the former Dirac point. We describe the synthesis of graphene sheets decorated with ultrathin, Si-rich two-dimensional (2D) islands (i.e., Gr:Si sheets), in which the electronic property of graphene is modulated by coupling with the Si-islands. Analyses based on transmission electron microscopy, atomic force microscopy, and electron and optical spectroscopies confirmed that Si-islands with thicknesses of ~2 to 4 nm and a lateral size of several tens of nm were bonded to graphene via van der Waals interactions. Field-effect transistors (FETs) based on Gr:Si sheets exhibited enhanced transconductance and maximum-to-minimum current level compared to bare-graphene FETs, and their magnitudes gradually increased with increasing coverage of Si layers on the graphene. The temperature dependent current-voltage measurements of the Gr:Si sheet showed approximately a 2-fold increase in the resistance by decreasing the temperature from 250 to 10 K, which confirmed the opening of the substantial bandgap (~2.5-3.2 meV) in graphene by coupling with Si islands.
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