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Ultra-long distance carrier transportation in bandgap-graded CdSSe nanowire waveguides.
Nanoscale
April 2019
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Carrier transportation in semiconductor nanowires is essential for their application in integrated opto-electronic devices. Therefore, it is of importance to manipulate and enhance the transportation performance of nanowires through micro-nano scale engineering. In this work, the carrier dynamics of the waveguides in the bandgap-graded CdSxSe1-x nanowires is systematically investigated.
View Article and Find Full Text PDFUltrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy.
Sci Rep
June 2016
Department of Physics, 2 Science Drive 3, National University of Singapore, 117542, Singapore.
Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy.
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