The structuring in organic electrically active thin films critically influences the performance of devices comprising them. Controlling film structure, however, remains challenging and generally requires stringent deposition conditions or modification of the substrate. To this end, we have developed post-deposition processing methods that are decoupled from the initial deposition conditions to induce different out-of-plane molecular orientations in contorted hexabenzocoronene (HBC) thin films. As-deposited HBC thin films lack any long-range order; subjecting them to post-deposition processing, such as hexanes-vapor annealing, thermal annealing, and physical contact with elastomeric poly(dimethyl siloxane), induces crystallization with increasing extents of preferential edge-on orientation, corresponding to greater degrees of in-plane π-stacking. Accordingly, transistors comprising HBC thin films that have been processed under these conditions exhibit field-effect mobilities that increase by as much as 2 orders of magnitude with increasing extents of molecular orientation. The ability to decouple HBC deposition from its subsequent structuring through post-deposition processing affords us the unique opportunity to tune competing molecule-molecule and molecule-solvent interactions, which ultimately leads to control over the structure and electrical function of HBC films.
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Astrobiology
January 2025
Experimental Biophysics and Space Sciences, Department of Physics, Freie Universitaet Berlin, Berlin, Germany.
The (PSS) experiment was part of the European Space Agency's mission and was conducted on the International Space Station from 2014 to 2016. The PSS experiment investigated the properties of montmorillonite clay as a protective shield against degradation of organic compounds that were exposed to elevated levels of ultraviolet (UV) radiation in space. Additionally, we examined the potential for montmorillonite to catalyze UV-induced breakdown of the amino acid alanine and its potential to trap the resulting photochemical byproducts within its interlayers.
View Article and Find Full Text PDFNanoscale
January 2025
Department of Materials Science and Engineering, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan.
Self-organization realizes various nanostructures to control material properties such as superconducting vortex pinning and thermal conductivity. However, the self-organization of nucleation and growth is constrained by the growth geometric symmetry. To realize highly controlled three-dimensional nanostructures by self-organization, nanostructure formation that breaks the growth geometric symmetry thermodynamically and kinetically, such as tilted or in-plane aligned nanostructures, is a challenging issue.
View Article and Find Full Text PDFMolecular junctions (MJs) are celebrated nanoelectronic devices for mimicking conventional electronic functions, including rectifiers, sensors, wires, switches, transistors, negative differential resistance, and memory, following an understanding of charge transport mechanisms. However, capacitive nanoscale molecular junctions are rarely seen. The present work describes electrochemically (E-Chem) grown covalently attached molecular thin films of 10, 14.
View Article and Find Full Text PDFCureus
December 2024
Internal Medicine, Medical Teaching Institution (MTI) Hayatabad Medical Complex, Peshawar, PAK.
Background: Malaria and dengue are significant mosquito-borne diseases prevalent in tropical and subtropical climates, with increasing reports of co-infections. This study aimed to determine the frequency, patterns, and risk factors of these co-infections in Peshawar.
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J Phys Chem Lett
January 2025
Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China.
We have systematically studied the electromagnetic transport properties of PbTe thin films under gate voltage modulation. The system demonstrates pronounced electron-electron interactions exclusively within the gate voltage range where only hole carriers are present. Furthermore, the Berry phase is utilized to qualitatively elucidate the transition between weak antilocalization (WAL) and weak localization (WL) through the regulation of gate voltage and temperature.
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