Empirical laws of particle extraction from single-grid source of bipolar ion-electron flow.

The present research is devoted to the problem of extraction grid choice for a single-grid source of bipolar ion-electron flow. The paper contains detailed reference information on ion and electron extraction characteristics of 10 different grids with broad range of parameters: aperture width (0.09-0.6 mm), grid transparency (0.19-0.51), thickness (0.036-0.5 mm), and with different aperture geometry. The grids with square, circular, and slit apertures were made with different technologies: laser cutting, welding, weaving, and electrolytic erosion. The general regularities of the ion and electron extraction from the single-grid source are experimentally researched for the cases of dc and RF extraction grid biasing. A conclusion has been made that the maximum extracted ion current at low ion energy (0-200 eV) does not significantly vary for all the grids and does not exceed half of the primary ion current from plasma multiplied by the optical grid transparency. The low-energy limit of efficient ion extraction has been discovered which cannot be overcome by the aperture narrowing. A conclusion is made that the RF extraction mode is superior for all the researched grids since it is characterized by higher extracted ion current at any acceleration voltage for any grid with much more simple and smooth extraction curves behavior in comparison to the dc case as well as absence of arcing, jumps, and hysteresis of the measured curves at any RF voltages. The unique ability of the RF biased single-grid source of simultaneous ion∕electron emission has been studied. The measured maximal attainable ion beam current compensation ratio is always sufficiently higher than 1 and typically varies in the range 2-6. The results obtained in the present paper demonstrate prospective of the single-grid source in space thruster applications and in modern technologies, particularly for ion beam processing of wide bandgap semiconductor devices such as GaN and SiC transistors due to inherent precise beam neutralization.