Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.
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http://dx.doi.org/10.1186/1556-276X-7-634 | DOI Listing |
Materials (Basel)
January 2025
State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
Silicon carbide-based titanium silicon carbide (SiC-TiSiC) composites with low free alloy content and varying TiSiC contents are fabricated by two-step reactive melt infiltration (RMI) thorough complete reactions between carbon and TiSi alloy in SiC-C preforms obtained. The densities of SiC-C preform are tailored by the carbon morphology and volumetric shrinkage of slurry during the gel-casting process, and pure composites with variable TiSiC volume contents are successfully fabricated with different carbon contents of the preforms. Due to the increased TiSiC content in the obtained composites, both electrical conductivity and electromagnetic interference (EMI) shielding effectiveness improved progressively, while skin depth exhibited decreased consistently.
View Article and Find Full Text PDFSci Rep
August 2024
Laboratory Light, nanomaterials, and nanotechnologies, L2n CNRS UMR 7076, Université de Technologie de Troyes, 10004, Troyes, France.
We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of MHz, enabling the interaction with the hyperfine structure of Er ions.
View Article and Find Full Text PDFMaterials (Basel)
May 2024
Funded Research Group Textile Plastic Composites and Hybrid Compounds, Department of Mechanical Engineering, Chemnitz University of Technology, 09107 Chemnitz, Germany.
The inductive heating of a CMC susceptor for industrial applications can generate very high process temperatures. Thus, the behavior of a silicon carbide-based matrix with carbon-fiber-reinforced carbon (C/C-SiC) as a susceptor is investigated. Specifically, the influence of fiber length and the distribution of carbon fibers in the composite were investigated to find out the best parameters for the most efficient heating.
View Article and Find Full Text PDFNanoscale
January 2024
School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China.
Silicon carbide (SiC) nanomaterials have emerged as promising candidates for supercapacitor electrodes due to their unique properties, which encompass a broad electrochemical stability range, exceptional mechanical strength, and resistance to extreme conditions. This review offers a comprehensive overview of the latest advancements in SiC nanomaterials for supercapacitors. It encompasses diverse synthesis methods for SiC nanomaterials, including solid-state, gas-phase, and liquid-phase synthesis techniques, while also discussing the advantages and challenges associated with each method.
View Article and Find Full Text PDFRSC Adv
November 2023
School of Chemistry and Chemical Engineering, Key Laboratory of Green Catalytic Materials and Technology in Ningxia, Ningxia Normal University Guyuan 756000 P. R. China
Acid-protonated crystalline silicon carbide-supported carbon nitride photocatalytic composites were successfully prepared by the impregnation-heat treatment method (P-g-CN/β-SiC and P-g-CN/α-SiC). The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FT-IR), UV-vis diffuse reflectance spectra (UV-vis-DRS) photoluminescence (PL), . The results of SEM showed that the P-g-CN/β-SiC and P-g-CN/α-SiC materials were transformed from large-area lamellar structures to uniform and dispersed lamellar particles.
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