In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.
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http://dx.doi.org/10.1186/1556-276X-7-633 | DOI Listing |
Phys Chem Chem Phys
February 2023
Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv 01601, Ukraine.
Using non-equilibrium molecular dynamics simulations, we demonstrate that the thermal conductivity of SiGe alloy nanowires is remarkably sensitive to inhomogeneous composition distributions. Specifically, the effects of Ge clustering on the thermal conductivity of SiGe nanowires are studied. The results showed that clustering Ge atoms can improve the thermal conductivity of SiGe alloy nanowires due to the reduction of random alloy scattering centers.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2023
IHP, Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany.
A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six strain tensor components with a lateral resolution of approximately 50 nm. Two different spatial scales governing the strain field fluctuations in proximity of the qubits are observed at <100 nm and >1 μm, respectively.
View Article and Find Full Text PDFACS Appl Mater Interfaces
April 2017
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan.
A high-Ge-content SiGe/compositionally graded SiGe-stacked structure grown on Si(001) is now considered to be an important platform for the realization of advanced nanometer-scale complementary metal oxide semiconductor devices with high-mobility channel materials, such as III-V materials and Ge, and monolithically integrated photonic modules. The performance of such advanced devices is critically influenced by crystalline inhomogeneity in the stacked structure; therefore, precise characterization of the crystallinity is important. In particular, the development of a characterization method not only for in-plane crystallinity but also for in-depth crystallinity is strongly required.
View Article and Find Full Text PDFNat Nanotechnol
January 2017
Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100, Denmark.
Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrolled nuclear spins in the host lattice constitutes a major source of decoherence.
View Article and Find Full Text PDFNanotechnology
October 2016
IFN-CNR, LNESS laboratory, via Anzani 42, I-22100 Como, Italy.
In this work we will show how local substrate patterning leads to a long range controlled propagation of dislocations in SiGe films grown on Si(001) substrates. Dislocations preferentially nucleate in the inhomogeneous strain field associated with the patterned pits, and then partialize on the local (111) surfaces which form the pit sidewalls. The resulting V-shaped defects extend for several microns and effectively block the propagation of randomly nucleated dislocations which propagate in the perpendicular direction.
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