The factors affecting transfer of nanowire arrays from their substrates into flexible PDMS films have been systematically investigated. Experiments were carried out on gallium phosphide nanowires with a standard length of 10 μm with varying pitch (0.2-1.5 μm). The important factors were found to be penetration of the PDMS within the nanowire arrays and the strength/rigidity of the PDMS film. The PDMS penetration between wires in the arrays is affected by both the viscosity of the PDMS solution and the presence of air pockets trapped within nanowire arrays, particularly at small pitches. Dilution with hexane and curing in a vacuum desiccator solve the wire penetration problem, and an increase in cure/base ratio increases the rigidity and strength of the PDMS. The procedures for preparation and deposition of the PDMS solution are optimized and a high yield, up to 95%, of wire transfer across a range of nanowire pitches has been obtained.
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http://dx.doi.org/10.1088/0957-4484/23/49/495305 | DOI Listing |
Light Sci Appl
January 2025
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China.
Metal-halide perovskite nanowire array photodetectors based on the solution method are valuable in the field of polarized light detection because of their unique one-dimensional array structure and excellent photoelectric performance. However, the limited wettability of liquids poses challenges for achieving large-scale and high-quality perovskite nanowire arrays. To address this issue, we develop a facile method utilizing capillary condensation to grow high-quality centimeter-scale perovskite nanowire arrays.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Physics, Beihang University, Beijing 100191, China.
Exploiting biomimetic perception of invisible spectra in flexible artificial human vision systems (HVSs) is crucial for real-time dynamic information processing. Nevertheless, the fast processing of motion objects in natural environments poses a challenge, necessitating that these artificial HVSs simultaneously have swift photoresponse and nonvolatile memory. Here, inspired by the human retina, we propose a flexible UV neuromorphic visual synaptic device (NeuVSD) based on GaO@GaN-composited nanowires for dynamic visual perception.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institute of Advanced Wear & Corrosion Resistant and Functional Materials, Jinan University, Guangzhou 510632, China.
As a type of century-old catalyst, the use of iron-based materials runs through the Haber-Bosch process and electrochemical synthesis of ammonia because of its excellent capability, low cost, and abundant reserves. How to continuously improve its catalytic activity and stability for electrochemical nitrogen fixation has always been a goal pursued by scientific researchers. Herein, we develop a free-standing iron-based catalyst, i.
View Article and Find Full Text PDFSmall Methods
January 2025
School of Electrical and Electronic Engineering Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Silicon nanowires (Si NWs) have attracted considerable interest owing to their distinctive properties, which render them promising candidates for a wide range of advanced applications in electronics, photonics, energy storage, and sensing. However, challenges in achieving large-scale production, high uniformity, and shape control limit their practical use. This study presents a novel fabrication approach combining nanoimprint lithography, nanotransfer printing, and metal-assisted chemical etching to produce highly uniform and shape-controlled Si NW arrays.
View Article and Find Full Text PDFNat Commun
January 2025
Department of Mechanical Engineering, Carnegie Mellon University, 5000 Forbes Ave, Pittsburgh, PA, USA.
Effective heat dissipation remains a grand challenge for energy-dense devices and systems. As heterogeneous integration becomes increasingly inevitable in electronics, thermal resistance at interfaces has emerged as a critical bottleneck for thermal management. However, existing thermal interface solutions are constrained by either high thermal resistance or poor reliability.
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