Vibrational modes of GaN nanowires in the gigahertz range.

Nanotechnology

Applied Chemicals and Materials Division, National Institute of Standards and Technology, Boulder, CO 80305, USA.

Published: December 2012

AI Article Synopsis

Article Abstract

Brillouin-light-scattering measurements and finite-element modeling of vibrational spectra in the range of 5-40 GHz are presented for an array of monocrystalline GaN nanowires with hexagonal cross sections. Analysis of the spectra is substantially complicated by the presence of a distribution of nanowire diameters. The measurements and calculations reveal a variety of modes with simple flexural, higher-order flexural, approximately 'plane-strain', approximately longitudinal and torsional displacement patterns that are similar to the corresponding modes of isotropic cylinders. The largest peaks in the spectra with acoustic angular wavenumbers in the range of 4 to ~15 μm(-1) were determined to arise from modes with relatively large transverse displacements, consistent with inelastic light scattering arising predominantly from surface ripple. These dominant modes have finite frequencies in the limit of zero wavenumber, corresponding to transverse standing waves. At higher wavenumbers, the spectra provide evidence for increased scattering through elasto-optic coupling, especially with respect to the emergence of a peak from a mode analogous to the longitudinal guided modes of thin films.

Download full-text PDF

Source
http://dx.doi.org/10.1088/0957-4484/23/49/495709DOI Listing

Publication Analysis

Top Keywords

gan nanowires
8
modes
5
vibrational modes
4
modes gan
4
nanowires gigahertz
4
gigahertz range
4
range brillouin-light-scattering
4
brillouin-light-scattering measurements
4
measurements finite-element
4
finite-element modeling
4

Similar Publications

Strong Enhancement of Light Emission in Core-Shell InGaN/GaN Multi-Quantum-Well Nanowire Light-Emitting Diodes by Incorporating Graphene Quantum Dots.

ACS Appl Mater Interfaces

January 2025

Department of Applied Physics and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Korea.

One-dimensional (1D) vertical nitrides are highly attractive for light-emitting diode (LED) applications because they are useful for overcoming the drawbacks of conventional GaN planar structures. However, the internal quantum efficiency (IQE) of GaN multi-quantum-well (MQW) nanowire (NW) LEDs, typical 1D GaN structures, is still too low to replace standard planar LEDs. Here, we report a phenomenon of light amplification from core-shell InGaN/GaN NW LEDs by incorporating graphene quantum dots (GQDs).

View Article and Find Full Text PDF

Scandium-III-nitrides: A New Material Platform for Semiconductor Photocatalysts with High Reducing Power.

Nano Lett

January 2025

Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.

Semiconductor nanowires have become emerging photocatalysts in artificial photosynthesis processes for solar fuel production. For reduction reactions, semiconductor photocatalysts with high reducing powers are highly desirable, especially for chemicals that are extremely difficult to reduce. This study introduces a new semiconductor photocatalyst, scandium (Sc)-III-nitrides, which have higher reducing powers than all conventional semiconductor photocatalysts.

View Article and Find Full Text PDF

Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology.

Natl Sci Rev

January 2025

Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, South Korea.

Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.

View Article and Find Full Text PDF

Quantized Acoustoelectric Floquet Effect in Quantum Nanowires.

Phys Rev Lett

November 2024

Department of Physics, IQIM, California Institute of Technology, Pasadena, California 91125, USA.

External coherent fields can drive quantum materials into nonequilibrium states, revealing exotic properties that are unattainable under equilibrium conditions-an approach known as "Floquet engineering." While optical lasers have commonly been used as the driving fields, recent advancements have introduced nontraditional sources, such as coherent phonon drives. Building on this progress, we demonstrate that driving a metallic quantum nanowire with a coherent wave of terahertz phonons can induce an electronic steady state characterized by a persistent quantized current along the wire.

View Article and Find Full Text PDF

Gallium nitride-based nanowires (NWs) overcome heteroepitaxy limits, enabling GaN-on-silicon devices, and offer high sensitivity for detection, sensing, and photocatalysis. Additional nanowire coating enhances their performance, protects against photoadsorption, and enables control over structural and optical properties. In this work, we investigate core-shell GaN-(Al/Hf)O nanowires, which meet the aforementioned expectations.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!