We investigate the selective amplification and filtering of injection-locked slotted Fabry-Perot semiconductor lasers. Current and temperature tuning are used to selectively filter and amplify subcarriers of coherent optical combs with a selectivity of at least 10 GHz with an optical gain of up to 18 dB for filtered lines. A side mode suppression ratio in excess of 20 dB is also achieved.
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Optical injection locking was used to red shift an integrated semiconductor laser up to 30 nm away from the main free running lasing mode. This injection locking of the laser beyond its band edge enabled its integration with an electroabsorption modulator to produce a 2.5 Gb/s eye diagram.
View Article and Find Full Text PDFInvestigation of active filter using injection-locked slotted Fabry-Perot semiconductor laser.
Appl Opt
October 2012
Physics Department, University College Cork, Cork, Ireland.
We investigate the selective amplification and filtering of injection-locked slotted Fabry-Perot semiconductor lasers. Current and temperature tuning are used to selectively filter and amplify subcarriers of coherent optical combs with a selectivity of at least 10 GHz with an optical gain of up to 18 dB for filtered lines. A side mode suppression ratio in excess of 20 dB is also achieved.
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