FeMn-based top spin valves Ta/[FeNi/CoFe]/Cu/CoFe/FeMn/Ta with different Cu and FeMn layers thicknesses were prepared by DC magnetron sputtering at room temperature. It was shown that low field hysteresis due to free layer magnetization reversal can be reduced down to (0.1 divided by 0.2) Oe keeping the GMR ratio higher 8% by using both layers thicknesses optimization and non-collinear geometry of magnetoresistance measurements. Dependence of low field hysteresis and GMR ratio on the angle between applied magnetic field and pinning direction are presented.
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| http://dx.doi.org/10.1166/jnn.2012.6522 | DOI Listing |
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Low hysteresis FeMn-based top spin valve.
J Nanosci Nanotechnol
September 2012
Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, S. Kovalevskaya Street 18, 620990 Ekaterinburg, Russia.
FeMn-based top spin valves Ta/[FeNi/CoFe]/Cu/CoFe/FeMn/Ta with different Cu and FeMn layers thicknesses were prepared by DC magnetron sputtering at room temperature. It was shown that low field hysteresis due to free layer magnetization reversal can be reduced down to (0.1 divided by 0.
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