We describe how strong resonant interactions in multimode optomechanical systems can be used to induce controlled nonlinear couplings between single photons and phonons. Combined with linear mapping schemes between photons and phonons, these techniques provide a universal building block for various classical and quantum information processing applications. Our approach is especially suited for nano-optomechanical devices, where strong optomechanical interactions on a single photon level are within experimental reach.
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http://dx.doi.org/10.1103/PhysRevLett.109.013603 | DOI Listing |
Phys Rev Lett
December 2024
University of Connecticut, University of Connecticut, School of Mechanical, Aerospace, and Manufacturing Engineering, Storrs, Connecticut 06269, USA and Institute of Materials Science, Storrs, Connecticut 06269, USA.
Flat lines within a band structure represent constant frequency bands for all momentum values (i.e., they maintain zero group velocity for all wave numbers).
View Article and Find Full Text PDFThermal engineering can be used to exploit absorption in a silicon optical cavity. In this work, the steady state profile of the heat generated by absorption is shaped and used to generate a dynamic heterostructure in a weakly confined silicon optical cavity. This is demonstrated in an edge defect photonic crystal optomechanical cavity to produce phonon lasing and sub-GHz optical pulsing with photon-phonon cooperativity of 0.
View Article and Find Full Text PDFSci Bull (Beijing)
January 2025
Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea; POSCO-POSTECH-RIST Convergence Research Center for Flat Optics and Metaphotonics, Pohang 37673, Republic of Korea. Electronic address:
Band topology has emerged as a novel tool for material design across various domains, including photonic and phononic systems, and metamaterials. A prominent model for band topology is the Su-Schrieffer-Heeger (SSH) chain, which reveals topological in-gap states within Bragg-type gaps (BG) formed by periodic modification. Apart from classical BGs, another mechanism for bandgap formation in metamaterials involves strong coupling between local resonances and propagating waves, resulting in a local resonance-induced bandgap (LRG).
View Article and Find Full Text PDFPNAS Nexus
January 2025
The Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109-1040, USA.
The direct, ultrafast excitation of polar phonons with electromagnetic radiation is a potent strategy for controlling the properties of a wide range of materials, particularly in the context of influencing their magnetic behavior. Here, we show that, contrary to common perception, the origin of phonon-induced magnetic activity does not stem from the Maxwellian fields resulting from the motion of the ions themselves or the effect their motion exerts on the electron subsystem. Through the mechanism of electron-phonon coupling, a coherent state of circularly polarized phonons generates substantial non-Maxwellian fields that disrupt time-reversal symmetry, effectively emulating the behavior of authentic magnetic fields.
View Article and Find Full Text PDFNanophotonics
January 2025
Departamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Madrid, 28040 Spain.
Polar biaxial crystals with extreme anisotropy hold promise for the spatial control and the manipulation of polaritons, as they can undergo topological transitions. However, taking advantage of these unique properties for nanophotonic devices requires to find mechanisms to modulate dynamically the material response. Here, we present a study on the propagation of surface phonon polaritons (SPhPs) in a photonic architecture based on a thin layer of α-MoO deposited on a semiconducting 4H-SiC substrate, whose carrier density can be tuned through photoinduction.
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