We have studied the incommensurate-ordered phase in overdoped La0.4Sr1.6MnO4 by resonant x-ray diffraction at the Mn K edge. Weak resonant superlattice (h±0.2 h±0.2 0) and (h±0.4 h±0.4 0) reflections of the tetragonal structure were found below ~240 K. The energy, azimuth angle, and polarization dependencies of the resonant scattering have revealed sinusoidal modulations of the oxygen motions that are transverse and longitudinal to the tetragonal [110] direction. This result discards (Mn(3+),Mn(4+))-like stripe-type order but point to a charge-density-modulation picture.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/PhysRevLett.109.107202 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Incommensurate Spiral Spin Order in CaMnBi Observed via High-Pressure Neutron Diffraction.
Inorg Chem
January 2024
Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, United States.
High-pressure neutron diffraction is employed to investigate the magnetic behavior of CaMnBi in extreme conditions. In contrast to antiferromagnetic ordering on Mn atoms reported at ambient pressure, our results reveal that at high pressure, incommensurate spiral spin order emerges due to the interplay between magnetism on the Mn atoms and strong spin-orbit coupling on the Bi atoms: sinusoidal spin order is observed at pressures as high as 7.4 GPa.
View Article and Find Full Text PDFCrystal and magnetic structures of RNiIn compounds (R = Tb and Ho).
Acta Crystallogr B Struct Sci Cryst Eng Mater
October 2023
Jagiellonian University, Faculty of Physics, Astronomy and Applied Computer Science, M. Smoluchowski Institute of Physics, prof. Stanisława Łojasiewicza 11, PL-30-348 Kraków, Poland.
Crystal and magnetic structures of RNiIn (R = Tb and Ho) have been studied using powder neutron diffraction at low temperatures. The compounds crystallize as orthorhombic crystal structures of the MnAlB type. At low temperatures, the magnetic moments localized solely on the rare earth atoms form antiferromagnetic structures.
View Article and Find Full Text PDFA Fractional-Order Sinusoidal Discrete Map.
Entropy (Basel)
February 2022
State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi'an Jiaotong University, Xi'an 710049, China.
In this paper, a novel fractional-order discrete map with a sinusoidal function possessing typical nonlinear features, including chaos and bifurcations, is proposed. Firstly, the basic properties involving the stability of the equilibrium points and the symmetry of the map are studied by theoretical analysis. Secondly, the dynamics of the map in commensurate-order and incommensurate-order cases with initial conditions belonging to different basins of attraction is investigated by numerical simulations.
View Article and Find Full Text PDFStrain relaxation dynamics of multiferroic orthorhombic manganites.
J Phys Condens Matter
April 2021
Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, 7491 Trondheim, Norway.
Resonant ultrasound spectroscopy has been used to characterise strain coupling and relaxation behavior associated with magnetic/magnetoelectric phase transitions in GdMnO, TbMnOand TbMnFeOthrough their influence on elastic/anelastic properties. Acoustic attenuation ahead of the paramagnetic to colinear-sinusoidal incommensurate antiferromagnetic transition at ∼41 K correlates with anomalies in dielectric properties and is interpreted in terms of Debye-like freezing processes. A loss peak at ∼150 K is related to a steep increase in electrical conductivity with a polaron mechanism.
View Article and Find Full Text PDFSingle In Ga As nanowire/p-Si heterojunction based nano-rectifier diode.
Nanotechnology
September 2017
Materials Science Centre, Indian Institute of Technology, Kharagpur, 721302, India.
Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In Ga As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!