Spin transistor action from hidden Onsager reciprocity.

Phys Rev Lett

Faculty of Engineering and Natural Sciences, Sabanci University, Orhanli-Tuzla, Istanbul, Turkey.

Published: June 2012

We investigate generic Hamiltonians for confined electrons with weak inhomogeneous spin-orbit coupling. Using a local gauge transformation we show how the SU(2) Hamiltonian structure reduces to a U(1)×U(1) structure for spinless fermions in a fictitious orbital magnetic field, to leading order in the spin-orbit strength. Using an Onsager relation, we further show how the resulting spin conductance vanishes in a two-terminal setup, and how it is turned on by either weakly breaking time-reversal symmetry or opening additional transport terminals, thus allowing one to switch the generated spin current on or off. We numerically check our theory for mesoscopic cavities as well as Aharonov-Bohm rings.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.108.236601DOI Listing

Publication Analysis

Top Keywords

spin transistor
4
transistor action
4
action hidden
4
hidden onsager
4
onsager reciprocity
4
reciprocity investigate
4
investigate generic
4
generic hamiltonians
4
hamiltonians confined
4
confined electrons
4

Similar Publications

Background: Thin Film Transistors (TFTs) are increasingly prevalent electrical components in display products, ranging from smartphones to diagonal flat panel TVs. The limitations in existing TFT technologies, such as high-temperature processing, carrier mobility, lower ON/OFF ratio, device mobility, and thermal stability, result in the search for new semiconductor materials with superior properties.

Objective: The main objective of this present work is to fabrícate the efficient Single-Walled Carbon Nanotube Thin Film Transistor (TFT) for flat panel display.

View Article and Find Full Text PDF

Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).

View Article and Find Full Text PDF

Metal-organic frameworks (MOFs) are a fascinating class of structured materials with diverse functionality originating from their distinctive physicochemical properties. This review focuses on the specific chemical design of geometrically frustrated MOFs along with the origin of the intriguing magnetic properties. We have discussed the arrangement of spin centres (metal and ligand) which are responsible for the unusual magnetic phenomena in MOFs.

View Article and Find Full Text PDF

High Mobility Emissive Organic Semiconductors for Optoelectronic Devices.

J Am Chem Soc

January 2025

Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China.

High mobility emissive organic semiconductors (HMEOSCs) are a kind of unique semiconducting material that simultaneously integrates high charge carrier mobility and strong emission features, which are not only crucial for overcoming the performance bottlenecks of current organic optoelectronic devices but also important for constructing high-density integrated devices/circuits for potential smart display technologies and electrically pumped organic lasers. However, the development of HMEOSCs is facing great challenges due to the mutually exclusive requirements of molecular structures and packing modes between high charge carrier mobility and strong solid-state emission. Encouragingly, considerable advances on HMEOSCs have been made with continuous efforts, and the successful integration of these two properties within individual organic semiconductors currently presents a promising research direction in organic electronics.

View Article and Find Full Text PDF

On-site biosignal amplification using a single high-spin conjugated polymer.

Nat Commun

January 2025

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Materials Science and Engineering, Peking University, Beijing, China.

On-site or in-sensor biosignal transduction and amplification can offer several benefits such as improved signal quality, reduced redundant data transmission, and enhanced system integration. Ambipolar organic electrochemical transistors (OECTs) are promising for this purpose due to their high transconductance, low operating voltage, biocompatibility, and suitability for miniaturized amplifier design. However, limitations in material performance and stability have hindered their application in biosignal amplification.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!