The anomalous (τ < 10 ns) luminescence of wide bandgap crystals of lithium-gadolinium orthoborate Li(6)GdB(3)O(9) doped with trivalent cerium ions, has been revealed for the first time and investigated through the low-temperature time-resolved vacuum ultraviolet synchrotron spectroscopy. It was shown that the optical transitions at 6.2 eV are due to electron transfer from the ground 4f(1) states of Ce(3+) ion onto the autoionized states near the conduction band bottom of a crystal. These transitions lead to the formation of impurity-bound excitons in the form of correlated electron-hole pair, in which the hole component is localized at 4f-level of the cerium ion and an electron component is located at the conduction band bottom in the attractive potential of this hole. It is established that the direct radiative recombination of the cerium impurity-bound exciton leads to a fast broadband emission at 4.25 eV. The energy threshold for creation of the impurity-bound excitons was determined on the basis of the obtained spectroscopic data. We calculated the H(k) functions of distribution of the elementary relaxations over the reaction rate constants and explained on this basis the decay kinetics and quenching processes, not only for the anomalous emission at 4.25 eV, but for the ordinary 5d-4f luminescence at 3.0 eV in Ce(3+) ions. The paper discusses the decay channels for the impurity-bound excitons and their influence on the decay kinetics and spectra of luminescence in Li(6)GdB(3)O(9) crystals.
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http://dx.doi.org/10.1088/0953-8984/24/40/405902 | DOI Listing |
Nat Commun
November 2024
Department of Physics, National University of Singapore, Singapore, Singapore.
Point defects in crystalline solids behave as optically addressable individual quantum systems when present in sufficiently low concentrations. In two-dimensional (2D) semiconductors, such quantum defects hold potential as versatile single photon sources. Here, we report the synthesis and optical properties of Nb-doped monolayer WS in the dilute limit where the average spacing between individual dopants exceeds the optical diffraction limit, allowing the emission spectrum to be studied at the single-dopant level.
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December 2017
Department of Physics, University of Cincinnati, Cincinnati, OH 45221, United States of America.
We studied the emission of bare and aluminum quinoline (Alq)/gold coated wurtzite GaN nanorods by temperature- and intensity-dependent time-integrated and time-resolved photoluminescence (PL). The GaN nanorods of ∼1.5 μm length and ∼250 nm diameter were grown by plasma-assisted molecular beam epitaxy.
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April 2014
1] Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA [2] Department of Physics, Justus Liebig University, 35392 Giessen, Germany.
The development of light-emitting diodes with improved efficiency, spectral properties, compactness and integrability is important for lighting, display, optical interconnect, logic and sensor applications. Monolayer transition-metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices.
View Article and Find Full Text PDFJ Phys Condens Matter
October 2012
Experimental Physics Department, Ural Federal University, 19 Mira Street, Ekaterinburg 620002, Russia.
The anomalous (τ < 10 ns) luminescence of wide bandgap crystals of lithium-gadolinium orthoborate Li(6)GdB(3)O(9) doped with trivalent cerium ions, has been revealed for the first time and investigated through the low-temperature time-resolved vacuum ultraviolet synchrotron spectroscopy. It was shown that the optical transitions at 6.2 eV are due to electron transfer from the ground 4f(1) states of Ce(3+) ion onto the autoionized states near the conduction band bottom of a crystal.
View Article and Find Full Text PDFNano Lett
September 2012
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States.
Quantum communication systems based on nanoscale semiconductor devices is challenged by inhomogeneities from device to device. We address this challenge using ZnMgSe/ZnSe quantum-well nanostructures with local laser-based heating to tune the emission of single impurity-bound exciton emitters in two separate devices. The matched emission in combination with photon bunching enables quantum interference from the devices and allows the postselection of polarization-entangled single photons.
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