A complementary metal oxide semiconductor (CMOS) image sensor is an intriguing technology for the development of a novel biosensor. Indeed, the CMOS image sensor mechanism concerning the detection of the antigen-antibody (Ag-Ab) interaction at the nanoscale has been ambiguous so far. To understand the mechanism, more extensive research has been necessary to achieve point-of-care diagnostic devices. This research has demonstrated a CMOS image sensor-based analysis of cardiovascular disease markers, such as C-reactive protein (CRP) and troponin I, Ag-Ab interactions on indium nanoparticle (InNP) substrates by simple photon count variation. The developed sensor is feasible to detect proteins even at a fg/mL concentration under ordinary room light. Possible mechanisms, such as dielectric constant and refractive-index changes, have been studied and proposed. A dramatic change in the refractive index after protein adsorption on an InNP substrate was observed to be a predominant factor involved in CMOS image sensor-based immunoassay.
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http://dx.doi.org/10.2116/analsci.28.875 | DOI Listing |
Micromachines (Basel)
January 2025
School of Microelectronics, Northwestern Polytechnical University, No. 1 Dongxiang Road, Chang'an District, Xi'an 710129, China.
In low intermediate frequency (low-IF) receivers, image interference rejection is one of the core tasks to be accomplished. Conventional active polyphase filters (APPFs) are unable to have a sufficient image rejection ratio (IRR) at high operating frequencies due to the degradation of the IRR by the amplitude and phase imbalances produced by the secondary pole. The proposed solution to the above problem is a frequency-dependent image rejection enhancement technique based on secondary pole compensation.
View Article and Find Full Text PDFDentomaxillofac Radiol
January 2025
Associate Professor, Division of Oral Diagnostic Sciences, School of Dentistry, Oregon Health & Science University, Portland, OR, USA.
Objectives: To compare a novel photon-counting sensor, two CBCT protocols and two CMOS sensors on the detection of gaps between a gutta-percha cone and root canal walls.
Methods: Twenty-five mandibular incisors were prepared to 45/.04 (size/taper) at working length.
This study investigates the role of pitch size in achieving high numerical aperture (NA) and focusing efficiency in metalens design, while demonstrating how high refractive index materials contribute to performance enhancement by enabling smaller pitch sizes through reduced filling ratios. Silicon-rich nitride (SRN) was chosen as the material platform due to its high refractive index, CMOS compatibility, and cost-effective fabrication. Two SRN-based metalenses were designed: a geometric phase metalens (GPM) and a propagation phase metalens (PPM), each evaluated at aspect ratios of 10:1 and 4:1.
View Article and Find Full Text PDFRSC Adv
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 106 Taiwan
Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams.
View Article and Find Full Text PDFResearch (Wash D C)
January 2025
Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics, Northeast Normal University, Changchun, China.
The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as the leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation and complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient image perception. As a p-type oxide material, CuO exhibits outstanding theoretical photoelectric conversion efficiency and broadband photoresponse.
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