Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1166/jnn.2012.6271 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Germanium nanocrystal non-volatile memory devices: fabrication, charge storage mechanism and characterization.
Nanoscale
January 2025
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583.
The widespread proliferation and increasing use of portable electronic devices and wearables, and the recent developments in artificial intelligence and internet-of-things, have fuelled the need for high-density and low-voltage non-volatile memory devices. Nanocrystal memory, an emergent non-volatile memory (NVM) device that makes use of the Coulomb blockade effect, can potentially result in the scaling of the tunnel dielectric layer to a very small thickness. Since the nanocrystals are electrically isolated, potential charge leakage paths localized defects in the thin tunnel dielectric can be substantially reduced, unlike that in a continuous polysilicon floating gate structure.
View Article and Find Full Text PDFDesign and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter.
Micromachines (Basel)
January 2025
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I/I ratio of more than seven orders of magnitude, with I reaching up to 2.
View Article and Find Full Text PDFMulti-terminal flexible DC grid circuit breaker withstands multi-lightning strike analysis.
Sci Rep
January 2025
The State Key Laboratory of Collaborative Innovation Center for Smart Grid Fault Detection, Protection and Control Jointly, Kunming University of Science and Technology, Kunming, 650500, China.
Lightning represents the primary threat to power grids, with approximately 80% of natural occurrences being multi-lightning strikes, which have been extensively studied and confirmed to pose even more severe hazards. Hybrid DC circuit breakers (DCCBs) exhibit promising application prospects due to their superior interruption performance. During multi-lightning strikes, lightning intrusive waves pose a greater threat to the insulation of equipment such as hybrid DC fuses, fast mechanical switches, and insulated gate bipolar transistors.
View Article and Find Full Text PDFSuperconductor-Insulator Transition Induced by Precise Subtripled Vapor Chemical Gating.
J Am Chem Soc
January 2025
State Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
Recent progress in superconductor-insulator transition has shed light on the intermediate metallic state with unique electronic inhomogeneity. The microscopic model, suggesting that carrier spatial distribution plays a decisive role in the intermediate state, has been instrumental in understanding the quantum transition. However, the narrow carrier density window in which the intermediate state exists necessitates precise control of the gate dielectric layer, presenting a challenge to in situ map the carrier spatial distribution.
View Article and Find Full Text PDFA novel pulse-current waveform circuit for low-energy consumption and low-noise transcranial magnetic stimulation.
Front Neurosci
January 2025
School of Electronic Information and Communications, Huazhong University of Science and Technology, Wuhan City, China.
Introduction: Transcranial magnetic stimulation (TMS) is widely used for the noninvasive activation of neurons in the human brain. It utilizes a pulsed magnetic field to induce electric pulses that act on the central nervous system, altering the membrane potential of nerve cells in the cerebral cortex to treat certain mental diseases. However, the effectiveness of TMS can be compromised by significant heat generation and the clicking noise produced by the pulse in the TMS coil.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!