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Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability. | LitMetric

AI Article Synopsis

  • * Through modeling and simulations, researchers found optimal thicknesses of 5 nm for IZO and 40 nm for HIZO, leading to improved device mobility and stability compared to traditional pure IZO and HIZO devices.
  • * The developed bilayer TFTs demonstrated a maximum mobility of 48 cm²/(V s) and enhanced stability (at -1.18 V), making them promising for high-definition, large

Article Abstract

A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.

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Source
http://dx.doi.org/10.1021/am301342xDOI Listing

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