Eighteen polytypic tick-borne encephalitis virus (TBEV) strains containing the fragments of E and NS1 protein genes of Siberian and Far Eastern, occasionally Siberian and European subtypes were isolated in the European and Asian parts of the tick-borne encephalitis (TBE) area. They were identified using real-time polymerase chain reaction, hybridization-fluorescence detection with genotype-specific probes, restriction fragment length polymorphism analysis, and E protein sequencing. The polytypic strains were isolated from individual Ixodes persulcatus ticks, their pools, from the blood of patients and the brain of dead patients. The isolation rates of the polytypic strains in the sympathry area of different TBEV subtypes ranged from 4.4% (the Irkutsk Region) to 15.1% (the Yaroslavl Region). In addition to 2 polytypic strains, a strain similar to the TBEV 886-84 strain was isolated. The TBEV subtypes entering into the composition of the polytypic strains show nongenetic interactions, such as neutral replication or competition. The polytypic strains are stable during passages in the cultured pig embryo kidney epithelial cells and on cloning. Mouse brain passage promotes dissociation of polytypic strains. The conditions for the formation of polytypic strains and their role in the etiology of TBE are discussed.
Download full-text PDF |
Source |
---|
Nat Nanotechnol
June 2024
Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA.
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here we show that deliberate interlayer rotations in multilayer van der Waals heterostructures modulate both the spatial ordering and switching dynamics of polar domains.
View Article and Find Full Text PDFNat Commun
September 2023
Department of Chemistry, University of California, Berkeley, CA, 94720, USA.
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1T-TaS due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS devices. Here, we demonstrate the fabrication of nanothick verti-lateral H-TaS/1T-TaS heterostructures in which the number of endotaxial metallic H-TaS monolayers dictates the number of resistance transitions in 1T-TaS lamellae near room temperature.
View Article and Find Full Text PDFJ Am Chem Soc
February 2023
School of Materials Science and Engineering, Peking University, Beijing100871, China.
Materials (Basel)
January 2023
Boreskov Institute of Catalysis, 630090 Novosibirsk, Russia.
In this study, the crystalline structure and particle shape of CdMnS (x~0.3) in the composite photocatalysts prepared by hydrothermal synthesis at different temperatures (T = 80, 100, 120, and 140 °C) were analyzed. Along with mixed Cd-Mn sulfide, the catalysts contain a small amount of β-MnO.
View Article and Find Full Text PDFNanotechnology
October 2021
Solid State Physics, University of Siegen, Walter-Flex Straße 3, D-57068, Siegen, Germany.
Misfit strain in core-shell nanowires can be elastically released by nanowire bending in case of asymmetric shell growth around the nanowire core. In this work, we investigate the bending of GaAs nanowires during the asymmetric overgrowth by an InGaAs shell caused by avoiding substrate rotation. We observe that the nanowire bending direction depends on the nature of the substrate's oxide layer, demonstrated by Si substrates covered by native and thermal oxide layers.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!