The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing and microcontact printing of quantum dots have been recently developed. Herein, we present a simple method of patterning colloidal quantum dots for photonic nanostructures such as straight lines, rings and dot patterns either on transparent or metallic substrates. Sub-10 nm width of the patterned line could be achieved with a well-defined sidewall profile. Using this method, we demonstrate a surface plasmon launcher from a quantum dot cluster in the visible spectrum.
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http://dx.doi.org/10.1088/0957-4484/23/35/355302 | DOI Listing |
Methods Appl Fluoresc
January 2025
Department of Obstetrics and Gynecology, Shengjing Hospital of China Medical University, No.36 Sanhao Street, Heping District, Shenyang, Liaoning Province, China, Shenyang, 110004, CHINA.
Molybdenum disulfide quantum dots (MoS2 QDs) is a new type of graphite like nanomaterial, which exhibited well chemical stability, unique fluorescence characteristics, and excellent biocompatibility. The conventional hydrothermal synthesis of MoS2 generally requires a long-term reaction at high temperature and high pressure. Herein, we have developed a simple and fast MoS2 QDs synthesis scheme using microwave heating, and further modified the surface of MoS2 QDs using 3-aminophenylboronic acid.
View Article and Find Full Text PDFTalanta
January 2025
School of Agricultural Engineering, Key Laboratory of Modern Agricultural Equipment and Technology, Ministry of Education, Jiangsu University, Zhenjiang, Jiangsu, 212013, China; College of Agricultural Equipment Engineering, Henan University of Science and Technology, Luoyang, Henan, 471003, China. Electronic address:
Searching for new alternative to tripropylamine (TPrA) with low toxicity and high chemical stability for the tris(4,4'-dicarboxylic acid-2,2'-bipyridyl)ruthenium (II) (Ru(dcbpy)) based coreactant electrochemiluminescence (ECL) system is essential for widespread analytical applications. Here, nitrogen-doped graphene quantum dots (NGQDs) have been discovered to significantly amplify the ECL emission and increase the ECL efficiency of Ru(dcbpy) for the first time. However, the mechanism by which NGQDs act as coreactants is not well comprehended.
View Article and Find Full Text PDFNanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
View Article and Find Full Text PDFRSC Chem Biol
December 2024
State Key Laboratory of Microbial Technology, Shandong University Qingdao 266237 China
Microorganisms serve as biological factories for the synthesis of nanomaterials such as CdS quantum dots. Based on the uniqueness of sp., a one-step route was explored to directly convert cadmium waste into CdS QDs using these bacteria.
View Article and Find Full Text PDFNanoscale Adv
December 2024
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University Shenzhen 518060 China
Thin film transistors (TFTs) with InSnZnO (ITZO) and AlO as the semiconductor and dielectric layers, respectively, were investigated, aiming to elevate the device performance. Chemically synthesized CuInS/ZnS core/shell colloidal quantum dots (QDs) were used to passivate the semiconductor/dielectric interface. Compared with the pristine device, the device with the integrated QDs demonstrates remarkably improved electrical performance, including a higher electron mobility and a lower leakage current.
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