In this paper, we present the design and simulation of a p-n junction betavoltaic battery based on large-grain polysilicon. By the Monte Carlo simulation, the average penetration depth were obtained, according to which the optimal depletion region width was designed. The carriers transport model of large-grain polysilicon is used to determine the diffusion length of minority carrier. By optimizing the doping concentration, the maximum power conversion efficiency can be achieved to be 0.90% with a 10 mCi/cm(2) Ni-63 source radiation.
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| http://dx.doi.org/10.1016/j.apradiso.2012.06.009 | DOI Listing |
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