AI Article Synopsis
- The study analyzes the capacitance-voltage and current-voltage characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with varying gate lengths and drain-to-source distances.
- It concludes that the main scattering mechanism affecting electron mobility is influenced by the ratio of gate length to drain-to-source distance.
- For small ratios (less than 1/2), polarization Coulomb field scattering is the primary factor, while for larger ratios (more than 1/2), longitudinal optical phonon scattering and interface roughness scattering become dominant.
Article Abstract
Using measured capacitance-voltage curves with different gate lengths and current-voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in AlGaN/AlN/GaN HFETs is determined by the ratio of gate length to drain-to-source distance. For devices with small ratio (here, less than 1/2), polarization Coulomb field scattering dominates electron mobility. However, for devices with large ratio (here, more than 1/2), longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant. The reason is closely related to polarization Coulomb field scattering.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3477020 | PMC |
| http://dx.doi.org/10.1186/1556-276X-7-434 | DOI Listing |
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