AI Article Synopsis
- A new 3D fin-shaped field-effect transistor (FinFET) structure has been created using gallium arsenide (GaAs) for improved performance in high-mobility channels.
- The design features a thin channel with a specific thickness-to-width ratio and a nano-stacked high-k Al2O3 dielectric layer to reduce gate leakage.
- This innovative III-V MOSFET showcases excellent gate control and performance metrics such as a high Ion/Ioff ratio over 105 and a low subthreshold swing, outperforming traditional MOSFET designs.
Article Abstract
A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3466142 | PMC |
| http://dx.doi.org/10.1186/1556-276X-7-431 | DOI Listing |
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