Thin films of nanocrystalline CuInSe2 were prepared on glass substrates using chemical bath deposition in acidic medium at room temperature. Thickness of the chemically deposited CuInSe2 thin films was approximately 100 nm which composed of closely packed irregular grains of approximately 100-120 nm in diameter. X-ray diffraction pattern of CuInSe2 thin films showed nanocrystalline structure with (112) preferential orientation. The films exhibited faint black and direct band gap energy was 0.96 eV.
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http://dx.doi.org/10.1166/jnn.2012.5884 | DOI Listing |
Materials (Basel)
August 2024
Wright Center for Photovoltaics Innovation & Commercialization, Department of Physics & Astronomy, University of Toledo, Toledo, OH 43606, USA.
Flux calibrations in multi-source thermal co-evaporation of thin films have been developed based on real-time spectroscopic ellipsometry (RTSE) measurements. This methodology has been applied to fabricate CuInSe (CIS) thin film photovoltaic (PV) absorbers, as an illustrative example, and their properties as functions of deposition rate have been studied. In this example, multiple Cu layers are deposited step-wise onto the same Si wafer substrate at different Cu evaporation source temperatures ().
View Article and Find Full Text PDFHeliyon
August 2023
Instituto de diseño y Fabricación (IDF), Universitat Politécnica de València (UPV), Spain.
Herein, copper indium diselenide ternary (CuInSe) thin film has been deposited on Indium Tin Oxide (ITO) coated glass substrate by electrochemical deposition technique with different potential and pH solutions. CuInSe thin films were deposited by one-step electrodeposition before post-depot selenization at 450 °C for 30 min. The effect of potential and pH on the structural and optical properties of CuInSe thin film have been studied using X-ray diffraction (XRD), Scanning electron microscopy (SEM), and UV-Visible spectrometer.
View Article and Find Full Text PDFJ Synchrotron Radiat
September 2022
Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany.
A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-flow cryostat and state-of-the-art optical detection system, which covers a wide wavelength range of 300-1700 nm with a high spectral resolution of 0.4 nm.
View Article and Find Full Text PDFSci Rep
August 2022
Department of Physics, Sharif University of Technology, Tehran, 14588, Iran.
In this paper, the properties of CuInSe (CISe) films deposited on three transparent substrates (FTO, FTO/NiO, FTO/MoO) are studied. These substrates might be used for bifacial solar cells, in place of the conventional glass/Mo substrates. CISe layers are deposited by spray pyrolysis followed by a selenization process.
View Article and Find Full Text PDFMaterials (Basel)
March 2022
Interdisciplinary Research Center for Membranes and Water Security, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia.
Semiconductors used in the manufacture of solar cells are the subject of extensive research. Currently, silicon is the most commonly used material for photovoltaic cells, representing more than 80% of the global production. However, due to its very energy-intensive and costly production method, other materials appear to be preferable over silicon, including the chalcopyrite-structured semiconductors of the CIS-based family (Cu(In, Ga, Al) (Se, S)).
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