Evaluation of mesoporous silicon thermal conductivity by electrothermal finite element simulation.

Nanoscale Res Lett

Laboratoire de Microélectronique de Puissance, GREMAN, Université de Tours, 16 rue Pierre et Marie Curie, BP 7155, Tours, 37071, France.

Published: July 2012

The aim of this work is to determine the thermal conductivity of mesoporous silicon (PoSi) by fitting the experimental results with simulated ones. The electrothermal response (resistance versus applied current) of differently designed test lines integrated onto PoSi/silicon substrates and the bulk were compared to the simulations. The PoSi thermal conductivity was the single parameter used to fit the experimental results. The obtained thermal conductivity values were compared with those determined from Raman scattering measurements, and a good agreement between both methods was found. This methodology can be used to easily determine the thermal conductivity value for various porous silicon morphologies.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3463460PMC
http://dx.doi.org/10.1186/1556-276X-7-427DOI Listing

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