Fabrication of p-type silicon nanowire arrays with a high aspect ratio using electrochemical and alkaline etching.

We report on the fabrication of silicon nanostructures with a high aspect ratio that were created using a combination of electrochemical etching and alkaline etching. With this technique, we were able to fabricate nano- and/or micro-wire structures that are perfectly periodic over large areas of 3.14 cm2. After porous silicon was created by electrochemical etching, the effect of post-alkaline etching was investigated to determine how changes in the etching time, solution concentration and temperature of the etchant influenced the silicon morphology. As a result, periodic silicon wire arrays with good vertical alignment were obtained, and these arrays had a width of less than 500 nm and/or a high aspect ratio of more than 20.