Here we demonstrate the fabrication of SnO(x) thin-film transistors (TFTs), where SnO(x) thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO(x) thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO(x) thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1166/jnn.2012.5628 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration.
Nano Lett
December 2024
School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China.
The lack of low temperature processable, high-performance p-type oxide thin-film transistors (TFTs) limits their implementation in monolithically integrated back-end-of-line (BEOL) CMOS circuitries. In this work, we demonstrate a reactive magnetron-sputtered SnO TFT with unprecedented hole field-effect mobility (μ) of 38.7 cm/V·s, as well as an on/off current ratio () of 2.
View Article and Find Full Text PDFMetastable Oxygen-Induced Light-Enhanced Doping in Mixed Sn-Pb Halide Perovskites.
J Am Chem Soc
November 2024
Department of Chemical Engineering, Faculty of Applied Sciences, Delft University of Technology, 2629 HZ Delft, The Netherlands.
Mixed Sn-Pb halide perovskites are promising absorber materials for solar cells due to the possibility of tuning the bandgap energy down to 1.2-1.3 eV.
View Article and Find Full Text PDFLayered Sn-Au Thin Films for Increased Electrochemical ATR-SEIRAS Enhancement.
ACS Appl Mater Interfaces
April 2024
Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80303, United States.
electrochemical attenuated total reflection surface-enhanced infrared absorption spectroscopy (EC ATR-SEIRAS) is a valuable method for a fundamental understanding of electrochemical interfaces under real operating conditions. The applicability of this method depends on the ability to tune the optical and catalytic properties of an electrode film, and it thus requires unique optimization for any given material. Motivated by the growing interest in Sn-based electrocatalysts for selective reduction of CO to formate species, we investigate several Sn thin-film synthesis routes for the resulting SEIRA signal response.
View Article and Find Full Text PDFConstructing tin oxides Interfacial Layer with Gradient Compositions for Efficient Perovskite/Silicon Tandem Solar Cells with Efficiency Exceeding 28.
Small
April 2024
Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China.
Atomic layer deposition (ALD) growth of conformal thin SnO films on perovskite absorbers offers a promising method to improve carrier-selective contacts, enable sputter processing, and prevent humidity ingress toward high-performance tandem perovskite solar cells. However, the interaction between perovskite materials and reactive ALD precursor limits the process parameters of ALD-SnO film and requires an additional fullerene layer. Here, it demonstrates that reducing the water dose to deposit SnO can reduce the degradation effect upon the perovskite underlayer while increasing the water dose to promote the oxidization can improve the electrical properties.
View Article and Find Full Text PDFElectron Transport Layer Engineering Induced Carrier Dynamics Optimization for Efficient Cd-Free Sb Se Thin-Film Solar Cells.
Small
January 2024
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
Antimony selenide (Sb Se ) is a highly promising photovoltaic material thanks to its outstanding optoelectronic properties, as well as its cost-effective and eco-friendly merits. However, toxic CdS is widely used as an electron transport layer (ETL) in efficient Sb Se solar cells, which largely limit their development toward market commercialization. Herein, an effective green Cd-free ETL of SnO is introduced and deposited by atomic layer deposition method.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!