Link between O2SiH infrared band amplitude and porous silicon photoluminescence during ambient O3 oxidation.

Appl Spectrosc

Department of Chemistry, Natural Sciences Complex, University at Buffalo, The State University of New York, Buffalo, NY 14260-3000 USA.

Published: August 2012

We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O(3)) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH(x) (x = 1-3), O(y)SiH (y = 1-2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O(2)SiH band amplitude.

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http://dx.doi.org/10.1366/12-06630DOI Listing

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