The presence of electronic traps in nanoporous TiO(2) electrodes has been studied by cyclic voltammetry in aqueous media. These simple measurements allow us to map the density of states, providing evidence for the presence of a relatively small number of discrete electron traps at the band gap. We have taken advantage of the variety of TiO(2) synthetic procedures that lead to well-defined morphologies (such as nanowires, nanocolumns, nanotubes, and nanoparticles) of anatase and rutile to investigate the nature of these electron traps. They derive from the structural disorder at the contact between neighboring crystalline nanoparticles. As expected, both their density and energetic location are highly dependent, not only on the crystalline structure (whether it is anatase or rutile), but also on the electrode morphology (i.e. the facets that meet at the grain boundaries). The trap density is also sensitive to pH changes and to the presence of some adsorbates. This variation of the number of traps with the electrolyte indicates that on one hand, an apparent electronic density of states is actually measured. On the other, it indicates that the traps are surface-related in agreement with their particular location at the perimeter of the grain boundaries. The effect of these traps on the observed electrode catalytic reactivity has also been studied. In the dark, it is found that they are directly involved in the electron transfer toward oxygen. In addition, under illumination, the trap states show a deleterious effect, favoring electron recombination.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/cphc.201200072 | DOI Listing |
Insects
December 2024
Department of Entomology, Federal University of Lavras (UFLA), Lavras 37200-900, MG, Brazil.
A diverse orchard with fruit fly hosts may provide information about trophic relationships, including new insights into beneficial insects. We evaluated the composition of the fruit fly complex to provide information on tephritid species, parasitoids and multitrophic interactions for the southern region of Minas Gerais, Brazil. Sampling was carried out using traps and by collecting fruits from plants and/or the ground according to availability/the fruiting period.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China.
The praseodymium-doped indium zinc oxide (PrIZO) thin-film transistor (TFT) is promising for applications in flat-panel displays, due to its high carrier mobility and stability. Nevertheless, there are few studies on the mechanism of annealing on PrIZO films and the fabrication of flexible devices. In this work, we first optimized the annealing-process parameters on the glass substrate.
View Article and Find Full Text PDFJ Colloid Interface Sci
January 2025
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 China; School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 China. Electronic address:
Indium nitride (InN) exhibited significant potential as a photoelectrode material for photoelectrochemical (PEC) water splitting, attributed to its superior light absorption, high electron mobility, and direct bandgap. However, its practical application was constrained by rapid carrier recombination occurring within the bulk and at the surface. To address these limitations, researchers developed InN/UiO-66 heterojunction photoelectrodes, which markedly enhanced PEC water splitting for hydrogen production.
View Article and Find Full Text PDFRSC Adv
January 2025
Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University Almaty 050040 Kazakhstan.
In this paper, Gd-doped ZrO gate dielectric films and metal-oxide-semiconductor (MOS) capacitors structured as Al/ZrGdO /Si were prepared using an ultraviolet ozone (UVO)-assisted sol-gel method. The effects of heat treatment temperature on the microstructure, chemical bonding state, optical properties, surface morphology and electrical characteristics of the ZrGdO composite films and MOS capacitors were systematically investigated. The crystalline phase of the ZrGdO films appeared only at 600 °C, indicating that Gd doping effectively inhibits the crystallization of ZrO films.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
College of Physics Science and Technology, Hebei University, Baoding 071002, China.
Developing the Cd-free electron transport layer (ETL) is a crucial subject in the field of antimony selenide (SbSe) solar cells. At present, the power conversion efficiency (PCE) of the Cd-free SbSe solar cell is still substantially lower than that of CdS-based devices. It is significant to reveal the electron transfer features in SbSe/CdS heterojunction and SbSe/Cd-free ETL heterojunction for development of a Cd-free SbSe solar cell with high PCE.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!