AI Article Synopsis
- A new technique was proposed to enhance the accuracy of measuring the thickness and refractive index of silicon wafers by using a femtosecond pulse laser with a broad spectral bandwidth of around 100 nm.
- Significant advancements were made to the phase detection algorithm used in Fourier domain analysis to reduce the impact of environmental factors on measurements.
- The updated method achieved a measurement uncertainty of 48 nm for a silicon wafer thickness of 320.7 μm, which is roughly 20 times better than the previous methods.
Article Abstract
We have proposed a modified method to improve the measurement uncertainty of the geometrical thickness and refractive index of a silicon wafer. Because measurement resolution based on Fourier domain analysis depends on the spectral bandwidth of a light source directly, a femtosecond pulse laser having the broad spectral bandwidth of about 100 nm was adopted as a new light source. A phase detection algorithm in Fourier domain was also modified to minimize the effect related to environmental disturbance. Since the wide spectral bandwidth may cause a dispersion effect in the optical parts of the proposed interferometer, it was considered carefully through numerical simulations. In conclusion, the measurement uncertainty of geometrical thickness was estimated to be 48 nm for a double-polished silicon wafer having the geometrical thickness of 320.7 μm, which was an improvement of about 20 times that obtained by the previous method.
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| http://dx.doi.org/10.1364/OE.20.012184 | DOI Listing |
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