Electron transport in semiconducting zigzag carbon nanotubes is studied by solving the Boltzmann transport equation using the single-particle Monte Carlo technique. The electronic band structure is based on a standard nearest-neighbour tight-binding parameterization, and the phonon spectrum is calculated using a fourth nearest-neighbour force constant model. The electron-phonon scattering probabilities are calculated within a tight-binding formalism. The steady-state drift velocities for the semiconducting zigzag nanotubes (8, 0), (10, 0), (11, 0), (13, 0), and (25, 0) are computed as functions of electric field strength and temperature, and the results are analysed here. The results show the presence of negative differential resistance at high electric fields for some of the nanotubes. The drift velocity and the low-field mobility reach a maximum value of ≅ 4.67 × 10⁷ cm s⁻¹ and≅ 4 × 10⁴ cm² V⁻¹ s⁻¹, respectively, for a (25, 0) nanotube.
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http://dx.doi.org/10.1088/0957-4484/23/26/265703 | DOI Listing |
Nano Lett
January 2025
Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.
Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS) nanoribbons as small as sub-10 nm in width.
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January 2025
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, No. 68 Wenchang Road, Kunming 650093, China.
Artificial dimension control has been playing a vital role in electronic structure manipulation and properties generation. However, systematic investigations into the dimensional regulation, such as transformation from two-dimensional (2D) materials to well-controlled one-dimensional (1D) ribbons, remain insufficient via molecular beam epitaxy. Here, high-quality ultranarrow zigzag CuTe nanoribbons are atomically precisely prepared via the dimensional regulation induced by adjusting the Te chemical potential, utilizing CuSe monolayer as the starting 2D template.
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December 2024
Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan, 44919, Republic of Korea.
Nanographenes and polycyclic aromatic hydrocarbons, both finite forms of graphene, are promising organic semiconducting materials because their optoelectronic and magnetic properties can be modulated through precise control of their molecular peripheries. Several atomically precise edge structures have been prepared by bottom-up synthesis; however, no systematic elucidation of these edge topologies at the molecular level has been reported. Herein, we describe rationally designed modular syntheses of isomeric dibenzoixenes with diverse molecular peripheries, including cove, zigzag, bay, fjord, and gulf structured.
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December 2024
Petroleum and Chemical Engineering Department, College of Engineering, Sultan Qaboos University, Muscat 123, Oman.
Carbon nanotubes (CNTs) have emerged as one of the most capable and interesting materials in recent decades and have extraordinary mechanical properties (MPs) and resourceful applications in bioengineering and medicine. Equilibrium molecular dynamics simulations have been performed to investigate the structural and MPs of armchair, chiral, and semiconducting and metallic zigzag single-walled CNTs (SWCNTs) under varying temperature (K) and compressive and tensile strains ±γ (%) with reactive bond-order potential. New results elaborate on the buckling and deformation mechanisms of the SWCNTs through deep analyses of density profiles, radial distribution functions, structural visualizations, and stress-strain interactions.
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November 2024
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, U.K.
Monolayers of semiconducting transition metal dichalcogenides (TMDs) have long attracted interest for their intriguing optical and electronic properties. Recently, TMDs in their quasi-bulk form have started to show considerable promise for nanophotonics thanks to their high refractive indices, large optical anisotropy, wide transparency windows reaching to the visible, and robust room temperature excitons promising for nonlinear optics. Adherence of TMD layers to any substrate via van der Waals forces is a further key enabler for the nanofabrication of complex photonic structures requiring heterointegration.
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