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Competition between Bipolar Conduction Modes in Extrinsically -Doped MoS: Interaction with Gate Dielectric Matters.
ACS Nano
December 2024
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.
With reduced dimensionality and a high surface area-to-volume ratio, two-dimensional (2D) semiconductors exhibit intriguing electronic properties that are exceptionally sensitive to surrounding environments, including directly interfacing gate dielectrics. These influences are tightly correlated to their inherent behavior, making it critical to examine when extrinsic charge carriers are intentionally introduced to the channel for complementary functionality. This study explores the physical origin of the competitive transition between intrinsic and extrinsic charge carrier conduction in extrinsically -doped MoS, highlighting the central role of interactions of the channel with amorphous gate dielectrics.
View Article and Find Full Text PDFPhosphorus-based heterojunction tunnel field-effect transistors: from atomic insights to circuit renovations.
Phys Chem Chem Phys
December 2024
Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran 1461944563, Iran.
Tunnel field-effect transistors (TFETs) are gaining interest for low-power applications, but challenges like poor drive current, delayed saturation, and ambipolarity can hinder their performance. This work proposes a dopingless heterojunction TFET (DL-HTDET) utilizing advanced materials, all based on phosphorus, to address these issues. Our approach involves a comprehensive and accurate analysis of the DL-HTDET's behavior.
View Article and Find Full Text PDFThe Synergy Effect of Al/Ti Electrodes on Effective Electron Injection for n-Channel Transistors and Ambipolar Complementary Circuits.
J Phys Chem Lett
December 2024
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
This paper reports the utilization of cost-effective bottom-contact electrodes composed of aluminum (Al) and titanium (Ti) to facilitate efficient electron injection in n-channel organic transistors. The optimized Al/Ti electrode has a low work function of around 4.03 eV, combining the high conductivity of Al with the stable interface of Ti, making it highly suitable for the electrodes of n-channel transistors.
View Article and Find Full Text PDFSolution Processable Se-annulated Swallow Tail Perylene Bisimide Exhibiting Room Temperature Columnar Phase and Efficient Ambipolar Charge Carrier Mobility.
Chemistry
December 2024
Indian Institute of Technology Guwahati, Chemistry, Guwahati, 781039, Guwahati, INDIA.
This study presents a selenium-annulated perylene bisimide (PBI-SeST) stabilizing room temperature columnar hexagonal phase with exceptionally low clearing temperature. The synthesis of this Se-annulated PBI (PBI-SeST) was accomplished using the reductive Cadogan cyclization method, with the introduction of swallow tails to reduce the clearing temperature and improve solubility. In addition, the charge carrier mobility of the Se-bay annulated PBI is assessed by space charge limited current (SCLC) technique and juxtaposed with PBI as well as nitrogen and sulphur-bay-annulated PBIs.
View Article and Find Full Text PDFCharge noise in low Schottky barrier multilayer tellurium field-effect transistors.
Nanoscale
December 2024
Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India.
Creating van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and high carrier mobilities for bipolar transport, which are crucial for constructing fundamental building blocks like diodes and transistors in a 2D architecture. Following the recent discovery of elemental 2D tellurium, here, we systematically investigate the electrical transport and flicker noise of hydrothermally grown multilayer tellurium field effect transistors. While the devices exhibit a dominant p-type behavior with high hole mobilities up to ∼242 cm V s at room temperature and almost linear current-voltage characteristics down to 77 K, ambipolar behavior was observed in some cases.
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