AI Article Synopsis

  • Fullerene and acenequinone compounds were studied as electron mediators between a p-type semiconductive polymer and n-type oxide semiconductors for enhancing solar cell efficiency.
  • The research found that these sensitizers worked better with titanium dioxide than zinc oxide due to different dipole-induced vacuum level shifts impacting the conduction band.
  • Observations indicate that in titanium dioxide cells, sensitizers can enhance photovoltage and overall efficiency, while in zinc oxide cells, they tend to be less effective due to shifts in the conduction band, guiding future design of photocells.

Article Abstract

Fullerene and acenequinone compounds have been examined as electron mediators between a p-type semiconductive polymer and two n-type oxide semiconductors. Composite interlayer materials and photovoltaic test cells were assembled and studied for their fluorescence quenching, current-voltage, and quantum efficiency behavior to characterize the efficacy of the acceptor-sensitizers as electron-selective interlayers. The sensitizers are generally more effective with titanium dioxide than with zinc oxide, due to the difference in magnitude of dipole-induced vacuum level shifts at the respective oxide interfaces. In titanium dioxide-based solar cells, where dipole effects are weak, photovoltage and fill factor increase in a trend that matches the increase in the first reduction potential of the acceptor-sensitizers. Photosensitization of the oxide semiconductor by the acceptor-sensitizers is observed to operate either in parallel with the polymer as an alternate photosensitizer or in series with the polymer in a two-photon process, according to an acceptor-sensitizer's first reduction potential. In zinc oxide-based solar cells, where dipole effects are stronger, the acceptor-sensitizers impaired most devices, which is attributed to an upward shift of the oxide's conduction band edge caused by dipole-induced vacuum level shifts. These results have broad implications for designing electron-selective interlayers and solid-state photocells using sensitized oxide semiconductors.

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Source
http://dx.doi.org/10.1021/am300282dDOI Listing

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