Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes.

The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron-hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.