A double metal-layer thin-film platinum microelectrode array was fabricated for implantation between sclera and choroid based on MEMS processing techniques and photosensitive polyimide material. The array was composed of 60 stimulating sites (6 × 10) and four selectable returning electrodes. The diameter of each stimulating electrode was 350 μ m with a center-to-center spacing of 750 μm. The transient voltage responses of the electrode to current pulse stimulation indicated a charge-injection capacity greater than 52.1 μ C/cm (2) . Acute in vivo animal experiments showed that the implicit time of electrically evoked potentials (EEPs) was 17.09±1.45 ms at a threshold current of 25.55 ±5.43 μA for a full-row of simultaneously stimulated electrodes (i.e., current applied simultaneously to each of the 10 electrodes). Individual electrode stimulation threshold was 48.57 ±6.90 μA. The corresponding threshold charge densities were 13.28 ±2.82 μC/cm (2) and 25.24 ±3.59 μC/cm (2) , respectively. The spatial spread of the maximally recorded P1 response in the EEPs indicated a correspondence between the retinal stimulation site and the focal response location in the cortex. This method of array fabrication is suitable for acute suprachoroidal stimulation, and has a potential use for the fabrication of a visual prosthesis.
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http://dx.doi.org/10.1109/TNSRE.2012.2188042 | DOI Listing |
Nano Lett
July 2024
Department of Physics, Freie Universität Berlin, 14195 Berlin, Germany.
Thin-film stacks | consisting of a ferromagnetic-metal layer and a heavy-metal layer are spintronic model systems. Here, we present a method to measure the ultrabroadband spin conductance across a layer between and at terahertz frequencies, which are the natural frequencies of spin-transport dynamics. We apply our approach to MgO tunneling barriers with thickness = 0-6 Å.
View Article and Find Full Text PDFAdv Sci (Weinh)
August 2024
Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
Applying lattice strain to thin films, a critical factor to tailor their properties such as stabilizing a structural phase unstable at ambient pressure, generally necessitates heteroepitaxial growth to control the lattice mismatch with substrate. Therefore, while homoepitaxy, the growth of thin film on a substrate made of the same material, is a useful method to fabricate high-quality thin films, its application to studying strain-induced structural phases is limited. Contrary to this general belief, here the quasi-homoepitaxial growth of Cs and Rb thin films is reported with substantial in-plane compressive strain.
View Article and Find Full Text PDFPhys Chem Chem Phys
March 2024
College of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin 300072, Tianjin, China.
In this paper, a multifunctional device and a design method are proposed based on the vanadium dioxide (VO)-assisted metamaterial structure. The structure comprises several layers arranged from top to bottom, including a VO patch layer, a polyimide (PI) dielectric layer, an elliptical metal layer, a VO thin film layer, another PI dielectric layer, and a bottom metal layer. The research results show that the metamaterial structure enables linear-to-linear (LTL) polarization conversion and linear-to-circular (LTC) polarization conversion across multiple frequency bands when the VO is in the insulating state.
View Article and Find Full Text PDFSci Rep
January 2024
Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology - Hellas (FORTH), 70013, Heraklion, Crete, Greece.
In this work we study in-depth the antireflection and filtering properties of ultrathin-metal-film-based transparent electrodes (MTEs) integrated in thin-film solar cells. Based on numerical optimization of the MTE design and the experimental characterization of thin-film perovskite solar cell (PSC) samples, we show that reflection in the visible spectrum can be strongly suppressed, in contrast to common belief (due to the compact metal layer). The optical loss of the optimized electrode (~ 2.
View Article and Find Full Text PDFSilicon-based Schottky barrier photodetectors (SBPDs) are a cost-effective alternative to compound semiconductor-based photodetectors by extending the silicon's photodetection range to the near-infrared (NIR) region. However, SBPDs still suffer from low quantum yield due to poor absorption in a metal layer and low emission efficiency of hot electrons. This study investigates the use of thin copper (Cu) films as a means of improving the performance of SBPDs operating in the NIR region.
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