1,2-dipalmitoyl-sn-3-phosphoglycerocholine membranes were deposited onto a silicon substrate (Si/SiO(2)) using physical vapor deposition with in situ ellipsometric thickness control. Along several heating cycles it was possible to identify well-defined boundaries for gel, ripple, liquid crystalline, and fluid-disordered phases. Particularly, the second order transition between gel and ripple phase was clearly identified in the range of ~28-34 °C using Raman spectroscopy. Atomic force microscopy and imaging ellipsometry (IE) were used to observe and characterize the ripple phase undulations of period λ = 20.8 nm and average height h = 19.95 nm along the temperature interval of ~34 to 40 °C. Clusters/agglomerations heights of more than twice the membrane thickness were observed with IE, induced by heating cycles.
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