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Enhancing Hole Transport of Quantum-Dot Light-Emitting Diodes by a Cruciform Oligothiophene for Effective p-Type Doping.

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Effective p-type doping is essential to enhance hole transport and balance electron-hole injection in quantum dot light-emitting diodes (QLEDs). Here, an oligothiophene material is adopted as a p-type dopant in the hole-transport layer, considering its cruciform cross-center structure, precise molecular weight, and high purity. Compared with the dopant-free counterpart, hole transport capability at the optimal doping level exhibits a significant improvement, producing a boosted external quantum efficiency (EQE) and luminance up to 20.

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Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, P. R. China.

Despite the dominant position of aromatic fluorophores, we report herein the design and synthesis of quinoidal fluorophores based on rarely emissive quinoidal bithiophene. Quinoidal bitheno[3,4-b]thiophene, QBTT-C6, consisting of cruciform-fused (E)-1,2-bis(5-hexylthiophen-2-yl)ethene and quinoidal bithiophene, shows a fluorescence quantum yield of 8.5%, 25-fold higher than that of the parent quinoidal QBT chromophore, but its maximum emission is at similar wavelengths.

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Two swivel cruciform oligothiophenes are investigated for the occurrence of oxidative ring closure reactions. Surprisingly, instead of intramolecular cyclizations, a regioselective side chain oxidation of two of the four alpha-methylene groups next to the terminal thiophene rings is detected for one of the oligomers. Such side chain oxidations may be one unintended degradation pathway in oligothiophene-based organic semiconductors used as the active layer of organic field effect transistors (OFETs), organic light emitting diodes (OLEDs), and organic solar cells (OSCs).

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