The cotunneling current through a two-level quantum dot weakly coupled to ferromagnetic leads is studied in the Coulomb blockade regime. The cotunneling current is calculated analytically under simple but realistic assumptions as follows: (i) the quantum dot is described by the universal Hamiltonian, (ii) it is doubly occupied, and (iii) it displays a fast spin relaxation. We find that the dependence of the differential conductance on the bias voltage is significantly affected by the exchange interaction on the quantum dot. In particular, for antiparallel magnetic configurations in the leads, the exchange interaction results in the appearance of interference-type contributions from the inelastic processes to the cotunneling current. Such dependence of the cotunneling current on the tunneling amplitude phases should also occur in multi-level quantum dots weakly coupled to ferromagnetic leads near the mesoscopic Stoner instabilities.
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http://dx.doi.org/10.1088/0953-8984/24/15/155301 | DOI Listing |
J Chem Phys
August 2024
Institute for Theory of Statistical Physics, RWTH Aachen, 52056 Aachen, Germany.
The description of quantum transport in the strong system-reservoir coupling regime poses a significant theoretical and computational challenge that demands specialized tools for accurate analysis. RealTimeTransport is a new open-source C++ library that enables the computation of both stationary and transient transport observables for generic quantum systems connected to metallic reservoirs. It computes the Nakajima-Zwanzig memory kernels for both dynamics and transport in real-time, going beyond traditional expansions in the bare system-reservoir couplings.
View Article and Find Full Text PDFPhys Rev Lett
July 2024
Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
The spin degrees of freedom is crucial for the understanding of any condensed matter system. Knowledge of spin-mixing mechanisms is not only essential for successful control and manipulation of spin qubits, but also uncovers fundamental properties of investigated devices and material. For electrostatically defined bilayer graphene quantum dots, in which recent studies report spin-relaxation times T_{1} up to 50 ms with strong magnetic field dependence, we study spin-blockade phenomena at charge configuration (1,2)↔(0,3).
View Article and Find Full Text PDFNano Lett
May 2021
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly anisotropic leakage current in the spin blockade regime for a double dot, we extract the full -tensor and find that the spin-orbit field is in plane with an azimuthal angle of 59° to the axis of the nanowire. The direction of the spin-orbit field indicates a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in Ge hut wires.
View Article and Find Full Text PDFNat Commun
January 2021
Low Temperature Laboratory, Department of Applied Physics, Aalto University, Espoo, Finland.
Generation of electric voltage in a conductor by applying a temperature gradient is a fundamental phenomenon called the Seebeck effect. This effect and its inverse is widely exploited in diverse applications ranging from thermoelectric power generators to temperature sensing. Recently, a possibility of thermoelectricity arising from the interplay of the non-local Cooper pair splitting and the elastic co-tunneling in the hybrid normal metal-superconductor-normal metal structures was predicted.
View Article and Find Full Text PDFNano Lett
January 2019
Université Grenoble Alpes, CNRS, Grenoble INP*, Institut Néel , 38000 Grenoble , France.
We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental thermoelectric parameter is obtained by directly monitoring the magnitude of the voltage induced in response to a temperature difference across the junction, while keeping a zero net tunneling current through the device. In contrast to bulk materials and single molecules probed in a scanning tunneling microscopy (STM) configuration, investigating the thermopower in nanoscale electronic transistors benefits from the electric tunability to showcase prominent quantum effects.
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