AI Article Synopsis
- The paper introduces a new method for electrically tuning planar metamaterials by leveraging strong coupling between metamaterial resonances and engineered intersubband transitions.
- The authors develop a formalism to calculate the permittivity tensor for these transitions in semiconductor heterostructures, focusing on the case of biased GaAs quantum wells.
- This tuning technique is scalable across different wavelengths, from the visible spectrum to the far infrared, depending on the selection of metamaterials and semiconductor structures used.
Article Abstract
In this paper, we propose a new and versatile mechanism for electrical tuning of planar metamaterials: strong coupling of metamaterial resonances to engineered intersubband transitions that can be tuned through the application of an electrical bias. We present the general formalism that allows calculating the permittivity tensor for intersubband transitions in generic semiconductor heterostructures and we study numerically the specific case of coupling and tuning metamaterials in the thermal infrared through coupling to biased GaAs semiconductor quantum wells. This tuning mechanism can be scaled from the visible to the far infrared by the proper choice of metamaterials and semiconductor heterostructures.
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| http://dx.doi.org/10.1364/OE.20.006584 | DOI Listing |
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